SLUAAP2 March   2023 LMG2610 , UCC28782

 

  1.   Abstract
  2.   Trademarks
  3. 1Introduction
    1. 1.1 Design Requirement 1: Managing Thermals Induced by Power Losses
    2. 1.2 Design Requirement 2: Reducing Energy Storage Requirement by Switching at High Frequency
  4. 2A Brief Introduction to GaN's Value
  5. 3The Active Clamp Flyback
    1. 3.1 Power Loss Saving 1: Zero-Clamp Loss
    2. 3.2 Power Loss Saving 2: Zero-Voltage-Switching
  6. 4The Value of GaN in Active Clamp Flyback
  7. 5Leveraging Integrated GaN to Simplify ACF Stage
  8. 6Physical Design Implementations Using LMG2610 Integrated Half-Bridge and UCC28782 ACF Controller
    1. 6.1 UCC28782EVM-030
    2. 6.2 PMP23146
  9. 7Leverage Design Tools for ACF
  10. 8Summary
  11. 9References

2 A Brief Introduction to GaN's Value

Keeping the last two design requirements in mind, GaN technology can be used to address the challenges that come with managing thermals and switching at high frequencies. This is accomplished by three main advantages that GaN holds over silicon: reduced capacitance for a given resistance, faster switching speeds (not to be confused with switching frequency), and zero reverse-recovery losses due to the absence of a body diode.

Integrated GaN devices switch faster with low gate capacitance and gate charge (1 nC-Ω vs Si 4 nC-Ω).reduce switching losses with low output capacitance and output charge (5 nC-Ω vs Si 25 nC-Ω), and eliminate reverse recovery losses with the absence of a body diode

GUID-20230223-SS0I-SF4Z-ZW0V-SMJC9CH5MM3J-low.svg Figure 2-1 High Level GaN Structure Showing Cg, Qg, Coss, Qoss, Absence of Body Diode