SLYY193C january 2023 – april 2023 LMQ61460-Q1 , TPS54319 , TPS62088 , TPS82671 , UCC12040 , UCC12050
Although increasing the switching frequency can increase the power density, there is a reason why power converters today typically switch no higher than the megahertz range. Increasing the switching frequency comes with the undesired side effect of also causing increased switching losses and an associated temperature rise. This is largely caused by a few dominant switching losses.
To understand these switching losses, it is important to first introduce some industry nomenclature. In semiconductor devices, the amount of charge associated with that device is typically related to the on-state resistance. A lower resistance results in higher gate charge and parasitic capacitance. This trade-off of resistance and charge is often quantified by the RQ FoM, defined as a device on-resistance multiplied by the total charge that must be supplied to the terminal in order to switch the device at an operating voltage. In addition, the amount of area a device occupies to achieve a target resistance is often referred to as resistance times area (Rsp). You can reduce conduction losses by reducing the metal-oxide semiconductor field-effect transistor (MOSFET) on-state resistance (RDS(on)). However, reducing the on-state resistance also causes the device switching-related losses to go up, and increase the overall die area and cost.
Depending on the implementation and application, the impact of different switching losses on the overall power loss can vary. For more details about each type of loss, see the application note Power Loss Calculation with Common Source Inductance Consideration for Synchronous Buck Converters. For the purposes of this paper, we consider a buck converter example and highlight the key limiting factors associated with each loss component.