SPRADE8A November 2023 – April 2024 F29H850TU , F29H859TU-Q1 , TMS320F28P650DH , TMS320F28P650DK , TMS320F28P650SH , TMS320F28P650SK , TMS320F28P659DH-Q1 , TMS320F28P659DK-Q1 , TMS320F28P659SH-Q1
In this implementation, the emulated EEPROM is comprised of at least one Flash Sector. Due to the block erase requirement of Flash, a Flash sector has to be entirely reserved for the EEPROM Emulation. Based on the C2000 part number, the size of the Flash sector will vary. The area of the Flash sector is divided into a number of smaller sections and is referred to as a Page. For example, a 2K x 16 flash sector can be divided into 32 pages, each with a size of 64 x 16.
The data to be saved is first written in a buffer in RAM. Then, using the in-circuit programming facility of Generation 3 C2000 MCUs, the data is written to the first page in the selected sector(s) for EEPROM Emulation. The next time data is written to Flash, it will be written to the next page. This process continues until the last page in the selected sector is written. Upon reaching the last page, there are two ways to continue. If using Single-Unit EEPROM emulation, see the Single-Unit Emulation behavior to see how this is handled. If using Ping Pong EEPROM Emulation, see Ping-Pong Method to see how this is handled.
In addition to the Page Programming concept described above, there is also support for 64-Bit Programming. In this mode, the sector(s) is not broken into EEPROM banks and pages. 64-Bit Programming is discussed further in Section 5.2.10 and Section 5.2.11 .