SSZTCX6A April 2023 – February 2025 TPS7H5001-SP , TPS7H5002-SP , TPS7H5003-SP , TPS7H5004-SP , TPS7H5005-SEP , TPS7H5006-SEP , TPS7H5007-SEP , TPS7H5008-SEP , TPS7H6003-SP , TPS7H6005-SEP , TPS7H6013-SP , TPS7H6015-SEP , TPS7H6023-SP , TPS7H6025-SEP
Kurt Eckles
In the satellite industry, dramatic increases in local data processing, support for higher throughput communication links and the rapid adoption of electrical propulsion systems are driving demand for much higher performance electrical power systems (EPSs). The EPS is part of the bus section of a satellite, providing structural support and housing subsystems such as power, thermal management, communication and propulsion. The EPS generates, stores, regulates and distributes power to all other subsystems and payloads onboard the satellite.
The unique challenges and constraints of space missions require optimizing size, weight and power (SWaP). Here are some of the reasons why SWaP is such a big deal in satellite designs:
Because power is one of the most valuable resources on a satellite, maximizing EPS efficiency can help extend mission lifetimes, reduce mass and volume, and minimize thermal management overhead.
Beyond efficiency, an EPS must also handle a wide range of voltages and currents because of the number of power-supply topologies. Figure 1 shows some of the most common topologies.
The components and functions, shown in Figure 2, of a typical satellite EPS are:
Designers can solve their SWaP design challenges in satellite systems by combining pulse-width modulation (PWM) controllers with gate drivers and either silicon MOSFETs or GaN FETs. This approach enables development of optimized power supplies for the different parts of the EPS system.
When developing EPS, designers can select from a diverse range of the voltage and current level radiation-hardened Half-bridge GaN FET gate drivers that scale across the satellite’s entire EPS power tree. Available devices include the TPS7H6003-SP (200V), TPS7H6013-SP (60V), TPS7H6023-SP (22V) (100 krad TID, 75 MeV⋅cm2/mg SEL immune) and radiation-tolerant TPS7H6005-SEP (200V), TPS7H6015-SEP (60V), TPS7H6025-SEP (22V) (50 krad TID, 43 MeV⋅cm2/mg SEL immune). These gate drivers provide design flexibility by supporting a number of different power supply topologies and input formats.
Additionally, designers can also use PWM controllers like radiation-hardened TPS7H5001-SP and radiation-tolerant TPS7H5005-SEP PWM controllers that are designed to support a range of different power-supply implementations.
TI developed the following reference designs to help engineers working with space-grade PWM controllers and GaN FET gate drivers in various power-supply circuits, not only in the EPS, but also on select payload applications:
With power being one of the most valuable resources on a satellite, the EPS architecture can have a significant impact on the overall design. TI’s radiation-validated PWM controller families provide high efficiency and support a wide range of topologies, as well as an architecture that’s deployable in a diverse set of missions and orbits.
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