Packaging information
| Package | Pins TSSOP (PW) | 14 |
| Operating temperature range (°C) -40 to 85 |
| Package qty | Carrier 2,000 | LARGE T&R |
Features for the SN74CB3Q3125
- High-bandwidth data path (up to 500MHz)
- 5V tolerant I/Os with device powered up or powered down
- Low and flat ON-state resistance (ron) characteristics over operating range (ron = 3Ω typical)
- Rail-to-rail switching on data I/O ports
- 0V to 5V switching with 3.3V VCC
- 0V to 3.3V switching with 2.5V VCC
- Bidirectional data flow with near-zero propagation delay
- Low input and output capacitance minimizes loading and signal distortion (Cio(OFF) = 4pF typical)
- Fast switching frequency (fOE = 20MHz maximum)
- Data and control inputs provide undershoot clamp diodes
- Low power consumption (ICC = 0.3mA typical)
- VCC operating range from 2.3V to 3.6V
- Data I/Os support 0V to 5V signaling levels (0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, and 5V)
- Control inputs can be driven by TTL, 5V, or 3.3V CMOS outputs
- Ioff supports partial-power-down mode operation
- Latch-up performance exceeds 100mA per JESD 78, Class II
- ESD performance tested per JESD 22
- 2000V Human-Body Model (A114-B, Class II)
- 1000V Charged-Device Model (C101)
- Supports both digital and analog applications: USB interface, differential signal interface, bus isolation, low-distortion signal gating.
- For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application note CBT-C, CB3T, and CB3Q Signal-Switch Families.
Description for the SN74CB3Q3125
The SN74CB3Q3125 device is a high-bandwidth FET bus switch that uses a charge pump to elevate the gate voltage of the pass transistor, thus providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The SN74CB3Q3125 device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.