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UCC27614

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10-A/10-A single-channel gate driver with 4-V UVLO, 30-V VDD and low prop delay

Product details

Number of channels 1 Power switch IGBT, MOSFET Peak output current (A) 10 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 26 Features Enable pin, UVLO Operating temperature range (°C) -40 to 150 Rise time (ns) 5 Fall time (ns) 4 Propagation delay time (µs) 0.017 Input threshold CMOS, TTL Channel input logic CMOS, TTL Input negative voltage (V) -10 Rating Catalog Undervoltage lockout (typ) (V) 4 Driver configuration Single
Number of channels 1 Power switch IGBT, MOSFET Peak output current (A) 10 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 26 Features Enable pin, UVLO Operating temperature range (°C) -40 to 150 Rise time (ns) 5 Fall time (ns) 4 Propagation delay time (µs) 0.017 Input threshold CMOS, TTL Channel input logic CMOS, TTL Input negative voltage (V) -10 Rating Catalog Undervoltage lockout (typ) (V) 4 Driver configuration Single
SOIC (D) 8 29.4 mm² 4.9 x 6 WSON (DSG) 8 4 mm² 2 x 2
  • Typical 10-A sink 10-A source output currents
  • Input and enable pins capable of withstanding up to –10 V
  • Absolute maximum VDD voltage: 30 V
  • Wide VDD operating range from 4.5 V to 26 V with UVLO
  • Available in 2-mm x 2-mm SON8 package
  • Typical 17.5-ns propagation delay
  • EN (enable) pin in SOIC8 package
  • IN– pin can be used for enable/disable functionality
  • VDD independent input thresholds (TTL compatible)
  • Can be used as inverting or non-inverting driver
  • Operating junction temperature range of –40°C to 150°C
  • Typical 10-A sink 10-A source output currents
  • Input and enable pins capable of withstanding up to –10 V
  • Absolute maximum VDD voltage: 30 V
  • Wide VDD operating range from 4.5 V to 26 V with UVLO
  • Available in 2-mm x 2-mm SON8 package
  • Typical 17.5-ns propagation delay
  • EN (enable) pin in SOIC8 package
  • IN– pin can be used for enable/disable functionality
  • VDD independent input thresholds (TTL compatible)
  • Can be used as inverting or non-inverting driver
  • Operating junction temperature range of –40°C to 150°C

The UCC27614 is a single channel, high-speed, low-side gate driver capable of effectively driving MOSFET, IGBT, SiC, and GaN power switches. UCC27614 has a typical peak drive strength of 10 A, which reduces the rise and fall times of the power switches, lowering switching losses and increasing efficiency. The UCC27614 device’s small propagation delay yields better power stage efficiency by improving the dead-time optimization, pulse width utilization, control loop response, and transient performance of the system.

UCC27614 can handle –10-V on its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independent of the main control logic. The gate driver can quickly shut off the power stage if there is a fault in the system (which requires the power train to be turned-off). The enable function also improves system robustness. Many high-frequency switching power supplies exhibit high frequency noise at the gate of the power device, which can get injected into the output pin of the gate driver and can cause the driver to malfunction. The UCC27614 performs well in such conditions due to its transient reverse current and reverse voltage capability.

The strong internal pulldown MOSFET holds the output low if the VDD voltage is below the specified UVLO threshold. This active pulldown feature further improves system robustness. The UCC27614 device’s 10-A drive current in the 2-mm × 2mm package improves system power density. This small package also enables optimum gate driver placement and improved layout.

The UCC27614 is a single channel, high-speed, low-side gate driver capable of effectively driving MOSFET, IGBT, SiC, and GaN power switches. UCC27614 has a typical peak drive strength of 10 A, which reduces the rise and fall times of the power switches, lowering switching losses and increasing efficiency. The UCC27614 device’s small propagation delay yields better power stage efficiency by improving the dead-time optimization, pulse width utilization, control loop response, and transient performance of the system.

UCC27614 can handle –10-V on its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independent of the main control logic. The gate driver can quickly shut off the power stage if there is a fault in the system (which requires the power train to be turned-off). The enable function also improves system robustness. Many high-frequency switching power supplies exhibit high frequency noise at the gate of the power device, which can get injected into the output pin of the gate driver and can cause the driver to malfunction. The UCC27614 performs well in such conditions due to its transient reverse current and reverse voltage capability.

The strong internal pulldown MOSFET holds the output low if the VDD voltage is below the specified UVLO threshold. This active pulldown feature further improves system robustness. The UCC27614 device’s 10-A drive current in the 2-mm × 2mm package improves system power density. This small package also enables optimum gate driver placement and improved layout.

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Technical documentation

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Type Title Date
* Data sheet UCC27614 30-V, 10-A Single Channel Low Side Gate Driver with –10-V Input Capability datasheet (Rev. C) PDF | HTML 21 Jan 2022
Application note Selecting Gate Drivers for HVAC Systems PDF | HTML 04 Apr 2024
Application note Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 22 Jan 2024
Technical article Managing power-supply noise with a 30-V gate driver PDF | HTML 07 Dec 2021
Application note Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver PDF | HTML 10 Nov 2021
EVM User's guide Using the UCC27614EVM PDF | HTML 13 Jun 2021
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs 18 Jan 2019

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

UCC27614EVM — UCC27614 evaluation module for single-channel 30-V, 10-A high-speed low-side gate driver

The UCC27614 evaluation module (EVM) is designed for evaluation of TI's 30-V, 10-A single-channel 2 × 2 gate driver. This EVM is targeted to evaluate the driver IC against datasheet parameters. The driver IC may evaluated against various capacitive and resistive loads. The EVM may be setup in (...)

User guide: PDF | HTML
Not available on TI.com
Simulation model

UCC27614 SIMPLIS Model

SLUM794.ZIP (74 KB) - SIMPLIS Model
Simulation model

UCC27614 Unencrypted PSpice Model

SLUM885.ZIP (18 KB) - PSpice Model
Calculation tool

SLURB20 UCC27614 Schematic Review Template

Supported products & hardware

Supported products & hardware

Products
Low-side drivers
UCC27614 10-A/10-A single-channel gate driver with 4-V UVLO, 30-V VDD and low prop delay
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs

PMP23126 — 3-kW phase-shifted full bridge with active clamp reference design with > 270-W/in3 power density

This reference design is a GaN-based 3-kW phase-shifted full bridge (PSFB) targeting maximum power density. The design has an active clamp to minimize voltage stress on the secondary synchronous rectifier MOSFETs enabling use of lower voltage-rating MOSFETs with better figure-of-merit (FoM). (...)
Test report: PDF
Package Pins CAD symbols, footprints & 3D models
SOIC (D) 8 Ultra Librarian
WSON (DSG) 8 Ultra Librarian

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