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TPS51216-EP

ACTIVO

Controlador reductor síncrono de solución de alimentación de memoria DDR2, DDR3 y DDR3L completo, pr

Detalles del producto

Vin (min) (V) 3 Vin (max) (V) 28 Vout (min) (V) 0.7 Vout (max) (V) 1.8 Features Shutdown Pin for S3 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125 Iq (typ) (mA) 0.6 Product type DDR DDR memory type DDR, DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Vin (min) (V) 3 Vin (max) (V) 28 Vout (min) (V) 0.7 Vout (max) (V) 1.8 Features Shutdown Pin for S3 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125 Iq (typ) (mA) 0.6 Product type DDR DDR memory type DDR, DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
WQFN (RUK) 20 9 mm² 3 x 3
  • Synchronous buck controller (VDDQ)
    • Conversion voltage range: 3 to 28 V
    • Output voltage range: 0.7 to 1.8 V
    • 0.8% VREF accuracy
    • D-CAP™ mode for fast transient response
    • Selectable 300-kHz/400-kHz switching frequencies
    • Optimized efficiency at light and heavy loads with auto-skip function
    • Supports soft-off in S4/S5 states
    • OCL/OVP/UVP/UVLO protections
    • Powergood output
  • 2-A LDO (VTT), buffered reference (VTTREF)
    • 2-A (peak) sink and source current
    • Requires only 10-µF of ceramic output capacitance
    • Buffered, low noise, 10-mA VTTREF output
    • 0.8% VTTREF, 20-mV VTT accuracy
    • Support high-z in S3 and soft-off in S4/S5
  • Thermal shutdown
  • 20-Pin, 3 mm × 3 mm, WQFN Package
  • Supports Defense, Aerospace, and Medical Applications
    • Controlled baseline
    • One assembly/test site
    • One fabrication site
    • Available in military (–55°C to 125°C) temperature range (1)
    • Extended product life cycle
    • Extended product-change notification
    • Product traceability

(1)Additional temperature ranges available - contact factory

  • Synchronous buck controller (VDDQ)
    • Conversion voltage range: 3 to 28 V
    • Output voltage range: 0.7 to 1.8 V
    • 0.8% VREF accuracy
    • D-CAP™ mode for fast transient response
    • Selectable 300-kHz/400-kHz switching frequencies
    • Optimized efficiency at light and heavy loads with auto-skip function
    • Supports soft-off in S4/S5 states
    • OCL/OVP/UVP/UVLO protections
    • Powergood output
  • 2-A LDO (VTT), buffered reference (VTTREF)
    • 2-A (peak) sink and source current
    • Requires only 10-µF of ceramic output capacitance
    • Buffered, low noise, 10-mA VTTREF output
    • 0.8% VTTREF, 20-mV VTT accuracy
    • Support high-z in S3 and soft-off in S4/S5
  • Thermal shutdown
  • 20-Pin, 3 mm × 3 mm, WQFN Package
  • Supports Defense, Aerospace, and Medical Applications
    • Controlled baseline
    • One assembly/test site
    • One fabrication site
    • Available in military (–55°C to 125°C) temperature range (1)
    • Extended product life cycle
    • Extended product-change notification
    • Product traceability

(1)Additional temperature ranges available - contact factory

The TPS51216-EP provides a complete power supply for DDR2, DDR3 and DDR3L memory systems in the lowest total cost and minimum space. It integrates a synchronous buck regulator controller (VDDQ) with a 2-A sink/source tracking LDO (VTT) and buffered low noise reference (VTTREF). The TPS51216-EP employs D-CAP™ mode coupled with 300 kHz/400 kHz frequencies for ease-of-use and fast transient response. The VTTREF tracks VDDQ/2 within excellent 0.8% accuracy. The VTT, which provides 2-A sink/source peak current capabilities, requires only 10-µF of ceramic capacitance. In addition, a dedicated LDO supply input is available.

The TPS51216-EP provides rich useful functions as well as excellent power supply performance. It supports flexible power state control, placing VTT at high-Z in S3 and discharging VDDQ, VTT, and VTTREF (soft-off) in S4/S5 state.

The TPS51216-EP provides a complete power supply for DDR2, DDR3 and DDR3L memory systems in the lowest total cost and minimum space. It integrates a synchronous buck regulator controller (VDDQ) with a 2-A sink/source tracking LDO (VTT) and buffered low noise reference (VTTREF). The TPS51216-EP employs D-CAP™ mode coupled with 300 kHz/400 kHz frequencies for ease-of-use and fast transient response. The VTTREF tracks VDDQ/2 within excellent 0.8% accuracy. The VTT, which provides 2-A sink/source peak current capabilities, requires only 10-µF of ceramic capacitance. In addition, a dedicated LDO supply input is available.

The TPS51216-EP provides rich useful functions as well as excellent power supply performance. It supports flexible power state control, placing VTT at high-Z in S3 and discharging VDDQ, VTT, and VTTREF (soft-off) in S4/S5 state.

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Documentación técnica

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Tipo Título Fecha
* Data sheet TPS51216-EP Complete DDR2, DDR3 and DDR3L Memory Power Solution Synchronous Buck Controller, 2-A LDO, Buffered Reference datasheet (Rev. A) PDF | HTML 29 mar 2022
* VID TPS51216-EP VID V6216601 27 mar 2018
* Radiation & reliability report TPS51216MRUKREP Reliability Report 11 abr 2016

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Modelo de simulación

TPS51216 PSpice Transient Model

SLUM395.ZIP (67 KB) - PSpice Model
Modelo de simulación

TPS51216 TINA-TI Transient Reference Design

SLUM459.TSC (648 KB) - TINA-TI Reference Design
Modelo de simulación

TPS51216 TINA-TI Transient Spice Model

SLUM458.ZIP (72 KB) - TINA-TI Spice Model
Encapsulado Pines Símbolos CAD, huellas y modelos 3D
WQFN (RUK) 20 Ultra Librarian

Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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