Inicio Gestión de la energía Circuitos integrados multicanal (PMIC)
Inicio
Gestión de la energía
Circuitos integrados multicanal (PMIC)

TPS54116-Q1

ACTIVO

Solución automotriz de alimentación DDR para convertidor CC/CC VDDQ de 4 A y 2 MHz, LDO VTT de 1 A y

Haga su pedido ahora
Hoja de datos

TPS54116-Q1

ACTIVO
Hoja de datos Haga su pedido ahora

Detalles del producto

Vin (min) (V) 2.95 Vin (max) (V) 6 Vout (min) (V) -0.3 Vout (max) (V) 3.6 Features Complete Solution, Power good, Shutdown Pin for S3 Rating Automotive Operating temperature range (°C) -40 to 125 Iq (typ) (mA) 0.65 Product type DDR DDR memory type DDR, DDR2, DDR3, DDR3L, DDR4
Vin (min) (V) 2.95 Vin (max) (V) 6 Vout (min) (V) -0.3 Vout (max) (V) 3.6 Features Complete Solution, Power good, Shutdown Pin for S3 Rating Automotive Operating temperature range (°C) -40 to 125 Iq (typ) (mA) 0.65 Product type DDR DDR memory type DDR, DDR2, DDR3, DDR3L, DDR4
WQFN (RTW) 24 16 mm² 4 x 4
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C6
  • Single-chip DDR2, DDR3 and DDR3L Memory Power Solution
  • 4-A Synchronous Buck Converter
    • Integrated 33-mΩ High-side and 25-mΩ Low-side MOSFETs
    • Fixed Frequency Current-mode Control
    • Adjustable Frequency from 100 kHz to 2.5 MHz
    • Synchronizable to an External Clock
    • 0.6-V ±1% Voltage Reference Over Temperature
    • Adjustable Cycle-by-Cycle Peak Current Limit
    • Monotonic Start-up Into Pre-biased Outputs
  • 1-A Source/Sink Termination LDO with ±20-mV DC Accuracy
    • Stable with 2 × 10-µF MLCC Capacitor
    • 10-mA Source/Sink Buffered Reference Output Regulated to Within 49% to 51% of VDDQ
  • Independent Enable Pins with Adjustable UVLO and Hysteresis
  • Thermal Shutdown
  • –40°C to 150°C Operating TJ
  • 24-pin, 4-mm × 4-mm WQFN Package
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C6
  • Single-chip DDR2, DDR3 and DDR3L Memory Power Solution
  • 4-A Synchronous Buck Converter
    • Integrated 33-mΩ High-side and 25-mΩ Low-side MOSFETs
    • Fixed Frequency Current-mode Control
    • Adjustable Frequency from 100 kHz to 2.5 MHz
    • Synchronizable to an External Clock
    • 0.6-V ±1% Voltage Reference Over Temperature
    • Adjustable Cycle-by-Cycle Peak Current Limit
    • Monotonic Start-up Into Pre-biased Outputs
  • 1-A Source/Sink Termination LDO with ±20-mV DC Accuracy
    • Stable with 2 × 10-µF MLCC Capacitor
    • 10-mA Source/Sink Buffered Reference Output Regulated to Within 49% to 51% of VDDQ
  • Independent Enable Pins with Adjustable UVLO and Hysteresis
  • Thermal Shutdown
  • –40°C to 150°C Operating TJ
  • 24-pin, 4-mm × 4-mm WQFN Package

The TPS54116-Q1 device is a full featured 6-V, 4-A, synchronous step down converter with two integrated MOSFETs and 1-A sink/source double data rate (DDR) VTT termination regulator with VTTREF buffered reference output.

The TPS54116-Q1 buck regulator minimizes solution size by integrating the MOSFETs and reducing inductor size with up to 2.5-MHz switching frequency. The switching frequency can be set above the medium wave radio band for noise sensitive applications and is synchronizable to an external clock. Synchronous rectification keeps the frequency fixed across the entire output load range. Efficiency is maximized through integrated 25-mΩ low-side and 33-mΩ high-side MOSFETs. Cycle-by-cycle peak current limit protects the device during an overcurrent condition and is adjustable with a resistor at the ILIM pin to optimize for smaller inductors.

The VTT termination regulator maintains fast transient response with only 2 × 10-µF ceramic output capacitance reducing external component count. The TPS54116-Q1 uses remote sensing of VTT for best regulation.

Using the enable pins to enter a shutdown mode reduces supply current to 1-µA. Under voltage lockout thresholds can be set with a resistor network on either enable pin. The VTT and VTTREF outputs are discharged when disabled with ENLDO.

Full integration minimizes the IC footprint with a small 4 mm × 4 mm thermally enhanced WQFN package.

The TPS54116-Q1 device is a full featured 6-V, 4-A, synchronous step down converter with two integrated MOSFETs and 1-A sink/source double data rate (DDR) VTT termination regulator with VTTREF buffered reference output.

The TPS54116-Q1 buck regulator minimizes solution size by integrating the MOSFETs and reducing inductor size with up to 2.5-MHz switching frequency. The switching frequency can be set above the medium wave radio band for noise sensitive applications and is synchronizable to an external clock. Synchronous rectification keeps the frequency fixed across the entire output load range. Efficiency is maximized through integrated 25-mΩ low-side and 33-mΩ high-side MOSFETs. Cycle-by-cycle peak current limit protects the device during an overcurrent condition and is adjustable with a resistor at the ILIM pin to optimize for smaller inductors.

The VTT termination regulator maintains fast transient response with only 2 × 10-µF ceramic output capacitance reducing external component count. The TPS54116-Q1 uses remote sensing of VTT for best regulation.

Using the enable pins to enter a shutdown mode reduces supply current to 1-µA. Under voltage lockout thresholds can be set with a resistor network on either enable pin. The VTT and VTTREF outputs are discharged when disabled with ENLDO.

Full integration minimizes the IC footprint with a small 4 mm × 4 mm thermally enhanced WQFN package.
filter Buscar otro/a Circuitos integrados multicanal (PMIC)
Descargar Ver vídeo con transcripción Video

Documentación técnica

star =Principal documentación para este producto seleccionada por TI
No se encontraron resultados. Borre su búsqueda y vuelva a intentarlo.
Ver todo 6
Tipo Título Fecha
* Data sheet TPS54116-Q1 2.95-V to 6-V Input, 4-A Step-Down Converter and 1-A Source/Sink DDR Termination Regulator datasheet (Rev. B) PDF | HTML 17 oct 2016
User guide Single LP8733-Q1 User's Guide to Power DRA78x and TDA3 (Rev. A) PDF | HTML 31 mar 2021
Application note DDR VTT Power Solutions: A Competitive Analysis (Rev. A) 09 jul 2020
Technical article Improving DDR Memory Performance in Automotive Applications PDF | HTML 22 jun 2017
Technical article Four design tips to obtain 2MHz switching frequency PDF | HTML 03 oct 2016
EVM User's guide TPS54116EVM-830 4-A, 1-A, SWIFT™ Regulator Evaluation Module 11 ago 2016

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

TPS54116-Q1EVM-830 — Módulo de evaluación de solución automotriz de potencia DDR TPS54116-Q1

This evaluation module is designed to demonstrate the small printed-circuit-board areas that may be achieved when designing with the TPS54116-Q1 regulator. An external divider allows for an adjustable output voltage. The TPS54116-Q1 DC/DC converter is a synchronous buck converter designed to (...)

Guía del usuario: PDF
No disponible en TI.com
Modelo de simulación

TPS54116-Q1 PSpice Transient Model

SLVMBR1.ZIP (219 KB) - PSpice Model
Descargar
Diseños de referencia

TIDA-00530 — Diseño de referencia de potencia de calidad automotriz para sistemas basados en TDA3x de baja potenc

This solution was designed to make an integrated, size-optimized power design for ADAS applications using the TDA3x SoC off of an automotive battery input.  By targeting only applications with lower processing needs, we’re able to choose devices and components which are smaller, compared (...)
Design guide: PDF
Esquema: PDF
Encapsulado Pines Símbolos CAD, huellas y modelos 3D
WQFN (RTW) 24 Ultra Librarian
Se aplican los Términos y condiciones estándar de TI para los elementos de evaluación.

Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

Los productos recomendados pueden tener parámetros, módulos de evaluación o diseños de referencia relacionados con este producto de TI.

Soporte y capacitación

Foros de TI E2E™ con asistencia técnica de los ingenieros de TI

Ver todos los temas del foro en inglés

El contenido lo proporcionan “tal como está” TI y los colaboradores de la comunidad y no constituye especificaciones de TI. Consulte los términos de uso.

Si tiene preguntas sobre la calidad, el paquete o el pedido de productos de TI, consulte el soporte de TI. ​​​​​​​​​​​​​​

Videos