The UCC21737-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The device has up to ±10A peak source and sink currents.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common-mode transient immunity (CMTI).
The UCC21737-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.
El manual de seguridad funcional y el informe de la tasa de fallas en el tiempo (FIT) de seguridad funcional y del análisis modal de fallas (FMA) del pin se encuentran disponibles. Solicitar ahora
| Tipo | Título | Fecha | ||
|---|---|---|---|---|
| * | Data sheet | UCC21737-Q1 Automotive 10A Source and Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection and High-CMTI datasheet (Rev. C) | PDF | HTML | 17 jun 2024 |
| Application brief | Does My Design Need a Miller Clamp? | PDF | HTML | 11 dic 2024 | |
| Application note | Choosing Appropriate Protection Approach for IGBT and SiC Power Modules | PDF | HTML | 19 jul 2024 | |
| Certificate | UCC217xx/-Q1 CQC Certificate of Product Certification | 07 jun 2023 |
Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.
The UCC21732QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation (...)
| Encapsulado | Pines | Símbolos CAD, huellas y modelos 3D |
|---|---|---|
| SOIC (DW) | 16 | Ultra Librarian |
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