Información de empaque
| Encapsulado | Pines SOIC (D) | 8 |
| Rango de temperatura de funcionamiento (℃) -40 to 125 |
| Cant. de paquetes | Empresa de transporte 3,000 | LARGE T&R |
Características para UCC57102-Q1
- Qualified for automotive applications
- AEC-Q100
qualified
- Device temperature grade 1
- Typical 3A sink 3A source output currents
- DESAT protection with programmable delay
- Soft turn-off when fault happens
- Absolute maximum VDD voltage: 30V
- Input and enable pins capable of withstanding up to –5V
- Tight UVLO thresholds for bias flexibility
- Typical 26ns propagation delay
- Self-protect driver with thermal shutdown function
- Wide bias voltage range
- Available in 5mm × 4mm SOIC-8 package
- Operating junction temperature range of –40°C to 150°C
Descripción de UCC57102-Q1
The UCC5710x-Q1 is a single channel, high-performance low-side IGBT/SiC gate driver for high power automotive applications such as PTC heaters, traction inverter active discharge circuit, and other auxiliary subsystems. It offers protection features including Under-voltage-lock-out (UVLO), Desaturation protection (DESAT), FAULT report, and thermal shutdown protection. The UCC5710x-Q1 has a typical peak drive strength of 3A and it can handle –5V on its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. Depending on the different pin configuration, the wide voltage range of the bias supply provided in the UCC5710xB-Q1 accommodates bipolar voltage. Also, seperate high and low driver outputs (UCC5710xC-Q1) and an enable function (UCC5710xW-Q1) are provided. An accurate 5V output is available with the UCC5710xB-Q1 and UCC5710xC-Q1.