SN74CB3Q16244

アクティブ

4 個の制御入力採用、10pF オン状態静電容量、5V、1:1 (SPST)、16 チャネル、FET バス・スイッチ

製品詳細

Configuration 1:1 SPST Number of channels 16 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog Ron (typ) (Ω) 5 CON (typ) (pF) 10 Supply current (typ) (µA) 1000 Bandwidth (MHz) 500 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Supports input voltage beyond supply Input/output continuous current (max) (mA) 64 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
Configuration 1:1 SPST Number of channels 16 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog Ron (typ) (Ω) 5 CON (typ) (pF) 10 Supply current (typ) (µA) 1000 Bandwidth (MHz) 500 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Supports input voltage beyond supply Input/output continuous current (max) (mA) 64 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
SSOP (DL) 48 164.358 mm² 15.88 x 10.35 TSSOP (DGG) 48 101.25 mm² 12.5 x 8.1 TVSOP (DGV) 48 62.08 mm² 9.7 x 6.4
  • High-Bandwidth Data Path (Up to 500 MHz)(1)
  • 5-V Tolerant I/Os With Device Powered Up or
    Powered Down
  • Low and Flat ON-State Resistance (ron)
    Characteristics Over Operating Range
    (ron= 5 Ω Typical)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0 to 5-V Switching With 3.3-V VCC
    • 0 to 3.3-V Switching With 2.5-V VCC
  • Bidirectional Data Flow With Near-Zero
    Propagation Delay
  • Low Input and Output Capacitance Minimizes
    Loading and Signal Distortion
    (Cio(OFF) = 4 pF Typical)
  • Fast Switching Frequency (fOE = 20 MHz
    Maximum)
  • Data and Control Inputs Provide Undershoot
    Clamp Diodes
  • Low Power Consumption (ICC = 1 mA Typical)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0 to 5-V Signaling Levels
    (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or
    5-V and 3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA
    Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications
  • High-Bandwidth Data Path (Up to 500 MHz)(1)
  • 5-V Tolerant I/Os With Device Powered Up or
    Powered Down
  • Low and Flat ON-State Resistance (ron)
    Characteristics Over Operating Range
    (ron= 5 Ω Typical)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0 to 5-V Switching With 3.3-V VCC
    • 0 to 3.3-V Switching With 2.5-V VCC
  • Bidirectional Data Flow With Near-Zero
    Propagation Delay
  • Low Input and Output Capacitance Minimizes
    Loading and Signal Distortion
    (Cio(OFF) = 4 pF Typical)
  • Fast Switching Frequency (fOE = 20 MHz
    Maximum)
  • Data and Control Inputs Provide Undershoot
    Clamp Diodes
  • Low Power Consumption (ICC = 1 mA Typical)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0 to 5-V Signaling Levels
    (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or
    5-V and 3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA
    Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications

The SN74CB3Q16244 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The SN74CB3Q16244 device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q16244 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q16244 device is organized as four 4-bit bus switches with separate output-enable (1OE, 2OE, 3OE, 4OE) inputs. It can be used as four 4-bit bus switches, two 8-bit bus switches, or one 16-bit bus switch. When OE is low, the associated 4-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 4-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3Q16244 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The SN74CB3Q16244 device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q16244 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q16244 device is organized as four 4-bit bus switches with separate output-enable (1OE, 2OE, 3OE, 4OE) inputs. It can be used as four 4-bit bus switches, two 8-bit bus switches, or one 16-bit bus switch. When OE is low, the associated 4-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 4-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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技術資料

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種類 タイトル 最新の英語版をダウンロード 日付
* データシート SN74CB3Q16244 16-Bit FET Bus Switch 2.5-V – 3.3-V Low-Voltage High-Bandwidth Bus Switch データシート (Rev. A) PDF | HTML 2015年 9月 18日
アプリケーション・ノート Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 2022年 6月 2日
アプリケーション・ノート Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 2021年 12月 1日
アプリケーション・ノート CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C) PDF | HTML 2021年 11月 19日
アプリケーション概要 Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 2021年 1月 6日
セレクション・ガイド Logic Guide (Rev. AB) 2017年 6月 12日
アプリケーション・ノート Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
セレクション・ガイド ロジック・ガイド (Rev. AA 翻訳版) 最新英語版 (Rev.AB) 2014年 11月 6日
ユーザー・ガイド LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
その他の技術資料 Digital Bus Switch Selection Guide (Rev. A) 2004年 11月 10日
アプリケーション・ノート Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
ユーザー・ガイド Signal Switch Data Book (Rev. A) 2003年 11月 14日
アプリケーション・ノート Bus FET Switch Solutions for Live Insertion Applications 2003年 2月 7日

設計および開発

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シミュレーション・モデル

SN74CB3Q16244 IBIS Model

SCDM075.ZIP (25 KB) - IBIS Model
パッケージ ピン数 CAD シンボル、フットプリント、および 3D モデル
SSOP (DL) 48 Ultra Librarian
TSSOP (DGG) 48 Ultra Librarian
TVSOP (DGV) 48 Ultra Librarian

購入と品質

記載されている情報:
  • RoHS
  • REACH
  • デバイスのマーキング
  • リード端子の仕上げ / ボールの原材料
  • MSL 定格 / ピーク リフロー
  • MTBF/FIT 推定値
  • 使用原材料
  • 認定試験結果
  • 継続的な信頼性モニタ試験結果
記載されている情報:
  • ファブの拠点
  • 組み立てを実施した拠点

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