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SN74CB3Q6800

アクティブ

事前充電出力採用、3.3V、1:1 (SPST)、10 チャネル汎用 FET バス・スイッチ

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データシート

SN74CB3Q6800

アクティブ
データシート ご注文はこちら

製品詳細

Configuration 1:1 SPST Number of channels 10 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog Ron (typ) (Ω) 4.5 CON (typ) (pF) 9 Supply current (typ) (µA) 750 Bandwidth (MHz) 500 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Supports input voltage beyond supply Input/output continuous current (max) (mA) 64 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
Configuration 1:1 SPST Number of channels 10 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog Ron (typ) (Ω) 4.5 CON (typ) (pF) 9 Supply current (typ) (µA) 750 Bandwidth (MHz) 500 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Supports input voltage beyond supply Input/output continuous current (max) (mA) 64 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
SSOP (DBQ) 24 51.9 mm² 8.65 x 6 TSSOP (PW) 24 49.92 mm² 7.8 x 6.4 TVSOP (DGV) 24 32 mm² 5 x 6.4
  • High-Bandwidth Data Path (Up To 500 MHz)
  • 5-V Tolerant I/Os with Device Powered-Up or Powered-Down
  • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 4.5 Typical)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0- to 5-V Switching With 3.3-V VCC
    • 0- to 3.3-V Switching With 2.5-V VCC
  • B-Port Outputs Are Precharged by Bias Voltage (BIASV) to Minimize Signal Distortion During Live Insertion and Hot-Plugging
  • Supports PCI Hot Plug
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 3.5 pF Typical)
  • Fast Switching Frequency (fON\= 20 MHz Max)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 0.75 mA Typical)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.
  • High-Bandwidth Data Path (Up To 500 MHz)
  • 5-V Tolerant I/Os with Device Powered-Up or Powered-Down
  • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 4.5 Typical)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0- to 5-V Switching With 3.3-V VCC
    • 0- to 3.3-V Switching With 2.5-V VCC
  • B-Port Outputs Are Precharged by Bias Voltage (BIASV) to Minimize Signal Distortion During Live Insertion and Hot-Plugging
  • Supports PCI Hot Plug
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 3.5 pF Typical)
  • Fast Switching Frequency (fON\= 20 MHz Max)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 0.75 mA Typical)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.

The SN74CB3Q6800 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q6800 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q6800 is a 10-bit bus switch with a single output-enable (ON\) input. When ON\ is low, the 10-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When ON\ is high, the 10-bit bus switch is OFF and a high-impedance state exists between the A and B ports. The B port is precharged to bias voltage (BIASV) through the equivalent of a 10-k resistor when ON\ is high, or if the device is powered down (VCC = 0 V).

During insertion (or removal) of a card into (or from) an active bus, the card’s output voltage may be close to GND. When the connector pins make contact, the card’s parasitic capacitance tries to force the bus signal to GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with precharged bias voltage (BIASV) of the bus switch equal to the input threshold voltage level of the receivers on the active bus. This method will ensure that any glitch produced by insertion (or removal) of the card will not cross the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, ON\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3Q6800 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q6800 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q6800 is a 10-bit bus switch with a single output-enable (ON\) input. When ON\ is low, the 10-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When ON\ is high, the 10-bit bus switch is OFF and a high-impedance state exists between the A and B ports. The B port is precharged to bias voltage (BIASV) through the equivalent of a 10-k resistor when ON\ is high, or if the device is powered down (VCC = 0 V).

During insertion (or removal) of a card into (or from) an active bus, the card’s output voltage may be close to GND. When the connector pins make contact, the card’s parasitic capacitance tries to force the bus signal to GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with precharged bias voltage (BIASV) of the bus switch equal to the input threshold voltage level of the receivers on the active bus. This method will ensure that any glitch produced by insertion (or removal) of the card will not cross the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, ON\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
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種類 タイトル 最新の英語版をダウンロード 日付
* データシート SN74CB3Q6800 データシート (Rev. A) 2003年 11月 20日
アプリケーション・ノート Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 2022年 6月 2日
アプリケーション・ノート Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 2021年 12月 1日
アプリケーション・ノート CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C) PDF | HTML 2021年 11月 19日
アプリケーション概要 Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 2021年 1月 6日
セレクション・ガイド Logic Guide (Rev. AB) 2017年 6月 12日
アプリケーション・ノート Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
セレクション・ガイド ロジック・ガイド (Rev. AA 翻訳版) 最新英語版 (Rev.AB) 2014年 11月 6日
ユーザー・ガイド LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
その他の技術資料 Digital Bus Switch Selection Guide (Rev. A) 2004年 11月 10日
アプリケーション・ノート Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
ユーザー・ガイド Signal Switch Data Book (Rev. A) 2003年 11月 14日
アプリケーション・ノート Bus FET Switch Solutions for Live Insertion Applications 2003年 2月 7日

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シミュレーション・モデル

SN74CB3Q6800 IBIS Model

SCDM042.ZIP (25 KB) - IBIS Model
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パッケージ ピン数 CAD シンボル、フットプリント、および 3D モデル
SSOP (DBQ) 24 Ultra Librarian
TSSOP (PW) 24 Ultra Librarian
TVSOP (DGV) 24 Ultra Librarian
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