SN74CBT6845C
- Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
- B-Port Outputs Are Precharged by Bias Voltage (BIASV) to Minimize Signal Distortion During Live Insertion and Hot-Plugging
- Supports PCI Hot Plug
- Bidirectional Data Flow, With Near-Zero Propagation Delay
- Low ON-State Resistance (ron) Characteristics (ron = 3
Typical) - Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5.5 pF Typical)
- Data and Control Inputs Provide Undershoot Clamp Diodes
- Low Power Consumption (ICC = 3 µA Max)
- VCC Operating Range From 4 V to 5.5 V
- Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
- Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
- Supports Both Digital and Analog Applications: PCI Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating
The SN74CBT6845C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT6845C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The device also precharges the B port to a user-selectable bias voltage (BIASV) to minimize live-insertion noise.
The SN74CBT6845C is an 8-bit bus switch with a single output-enable (OE\) input. When OE\ is low, the 8-bit
bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When
OE\ is high, the 8-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. The B
port is precharged to BIASV through the equivalent of a 10-k resistor when OE\ is high, or if the device is
powered down (VCC = 0 V).
During insertion (or removal) of a card into (or from) an active bus, the card’s output voltage may be close to GND. When the connector pins make contact, the card’s parasitic capacitance tries to force the bus signal to GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with precharged bias voltage (BIASV) of the bus switch equal to the input threshold voltage level of the receivers on the active bus. This method will ensure that any glitch produced by insertion (or removal) of the card will not cross the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise.
This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
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| パッケージ | ピン数 | CAD シンボル、フットプリント、および 3D モデル |
|---|---|---|
| TSSOP (PW) | 20 | Ultra Librarian |
| VQFN (RGY) | 20 | Ultra Librarian |
購入と品質
- RoHS
- REACH
- デバイスのマーキング
- リード端子の仕上げ / ボールの原材料
- MSL 定格 / ピーク リフロー
- MTBF/FIT 推定値
- 使用原材料
- 認定試験結果
- 継続的な信頼性モニタ試験結果
- ファブの拠点
- 組み立てを実施した拠点