SN74CB3T3383

Name: SN74CB3T3383
Brand: TI
SKU: SN74CB3T3383
Price: 0.38 USD

활성

레벨 시프터를 지원하는 3.3V, 크로스포인트/교환, 10채널 FET 버스 스위치

지금 주문

데이터 시트

document-pdfAcrobat SN74CB3T3383 datasheet (Rev. A) (영어)

SN74CB3T3383

활성

데이터 시트

지금 주문

제품 상세 정보

Configuration

Crosspoint/exchange

Number of channels

10

Power supply voltage - single (V)

2.5, 3.3

Protocols

Analog

Ron (typ) (Ω)

5

CON (typ) (pF)

7

ON-state leakage current (max) (µA)

20

Operating temperature range (°C)

-40 to 85

Features

Powered-off protection, Signal path translation

Input/output continuous current (max) (mA)

100

Rating

Catalog

Drain supply voltage (max) (V)

3.6

Supply voltage (max) (V)

3.6

Configuration

Crosspoint/exchange

Number of channels

10

Power supply voltage - single (V)

2.5, 3.3

Protocols

Analog

Ron (typ) (Ω)

5

CON (typ) (pF)

7

ON-state leakage current (max) (µA)

20

Operating temperature range (°C)

-40 to 85

Features

Powered-off protection, Signal path translation

Input/output continuous current (max) (mA)

100

Rating

Catalog

Drain supply voltage (max) (V)

3.6

Supply voltage (max) (V)

3.6

SOIC (DW)

24

159.65 mm² 15.5 x 10.3

TSSOP (PW)

24

49.92 mm² 7.8 x 6.4

TVSOP (DGV)

24

32 mm² 5 x 6.4

Output Voltage Translation Tracks V_CC
Supports Mixed-Mode Signal Operation On All Data I/O Ports
- 5-V Input Down To 3.3-V Output Level Shift With 3.3-V V_CC
- 5-V/3.3-V Input Down To 2.5-V Output Level Shift With 2.5-V V_CC
5-V-Tolerant I/Os With Device Powered-Up or Powered-Down
Bidirectional Data Flow, With Near-Zero Propagation Delay
Low ON-State Resistance (r_on) Characteristics (r_on = 5 Typical)
Low Input/Output Capacitance Minimizes Loading (C_io(OFF) = 8 pF Typical)
Data and Control Inputs Provide Undershoot Clamp Diodes
Low Power Consumption (I_CC = 20 µA Max)
V_CC Operating Range From 2.3 V to 3.6 V
Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
I_off Supports Partial-Power-Down Mode Operation
Latch-Up Performance Exceeds 250 mA Per JESD 17
ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
Supports Digital Applications: Level Translation, Memory Interleaving, Bus Isolation
Ideal for Low-Power Portable Equipment

Output Voltage Translation Tracks V_CC
Supports Mixed-Mode Signal Operation On All Data I/O Ports
- 5-V Input Down To 3.3-V Output Level Shift With 3.3-V V_CC
- 5-V/3.3-V Input Down To 2.5-V Output Level Shift With 2.5-V V_CC
5-V-Tolerant I/Os With Device Powered-Up or Powered-Down
Bidirectional Data Flow, With Near-Zero Propagation Delay
Low ON-State Resistance (r_on) Characteristics (r_on = 5 Typical)
Low Input/Output Capacitance Minimizes Loading (C_io(OFF) = 8 pF Typical)
Data and Control Inputs Provide Undershoot Clamp Diodes
Low Power Consumption (I_CC = 20 µA Max)
V_CC Operating Range From 2.3 V to 3.6 V
Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
I_off Supports Partial-Power-Down Mode Operation
Latch-Up Performance Exceeds 250 mA Per JESD 17
ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
Supports Digital Applications: Level Translation, Memory Interleaving, Bus Isolation
Ideal for Low-Power Portable Equipment

The SN74CB3T3383 is a high-speed TTL-compatible FET bus-exchange switch with low ON-state resistance (r_on), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks V_CC. The SN74CB3T3383 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels (see Figure 1).

The SN74CB3T3383 is organized as a 10-bit bus switch or as a 5-bit bus-exchange with enable (BE)\ input. When used as a 5-bit bus-exchange, the device provides data exchanging between four signal ports. When BE\ is low, the bus-exchange switch is ON, and the select input (BX) controls the data path. When BE\ is high, the bus-exchange switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, BE\ should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3T3383 is a high-speed TTL-compatible FET bus-exchange switch with low ON-state resistance (r_on), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks V_CC. The SN74CB3T3383 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels (see Figure 1).

The SN74CB3T3383 is organized as a 10-bit bus switch or as a 5-bit bus-exchange with enable (BE)\ input. When used as a 5-bit bus-exchange, the device provides data exchanging between four signal ports. When BE\ is low, the bus-exchange switch is ON, and the select input (BX) controls the data path. When BE\ is high, the bus-exchange switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, BE\ should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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13개 모두 보기

	유형	직함		날짜
*	Data sheet	SN74CB3T3383 datasheet (Rev. A)		2004/12/02
	Application note	Selecting the Correct Texas Instruments Signal Switch (Rev. E)	PDF \| HTML	2022/06/02
	Application note	Multiplexers and Signal Switches Glossary (Rev. B)	PDF \| HTML	2021/12/01
	Application note	CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C)	PDF \| HTML	2021/11/19
	Selection guide	Logic Guide (Rev. AB)		2017/06/12
	Application note	How to Select Little Logic (Rev. A)		2016/07/26
	Application note	Understanding and Interpreting Standard-Logic Data Sheets (Rev. C)		2015/12/02
	User guide	LOGIC Pocket Data Book (Rev. B)		2007/01/16
	More literature	Digital Bus Switch Selection Guide (Rev. A)		2004/11/10
	Application note	Semiconductor Packing Material Electrostatic Discharge (ESD) Protection		2004/07/08
	Application note	Selecting the Right Level Translation Solution (Rev. A)		2004/06/22
	User guide	Signal Switch Data Book (Rev. A)		2003/11/14
	Application note	Bus FET Switch Solutions for Live Insertion Applications		2003/02/07

설계 및 개발

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The EVM-LEADED1 board allows for quick testing and bread boarding of TI's common leaded packages. The board has footprints to convert TI's D, DBQ, DCT,DCU, DDF, DGS, DGV, and PW surface mount packages to 100mil DIP headers.

사용 설명서: PDF

TI.com에서 구매 불가

시뮬레이션 모델

HSPICE Model for SN74CB3T3383

SCDJ027.ZIP (101 KB) - HSpice Model

다운로드

패키지	핀	CAD 기호, 풋프린트 및 3D 모델
SOIC (DW)	24	Ultra Librarian
TSSOP (PW)	24	Ultra Librarian
TVSOP (DGV)	24	Ultra Librarian

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SN74CB3T3383

레벨 시프터를 지원하는 3.3V, 크로스포인트/교환, 10채널 FET 버스 스위치

SN74CB3T3383

제품 상세 정보

기술 자료

설계 및 개발

LEADED-ADAPTER1 — TI의 5, 8, 10, 16 및 24핀 리드 패키지의 빠른 테스트를 위한 DIP 헤더 어댑터에 대한 표면 실장

HSPICE Model for SN74CB3T3383

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