The SM74101 MOSFET gate driver provides high peak gate drive current in the tiny WSON-6 package (SOT23 equivalent footprint), with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The SM74101 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
| Type | Title | Date | ||
|---|---|---|---|---|
| * | Data sheet | SM74101 Tiny 7A MOSFET Gate Driver datasheet (Rev. B) | PDF | HTML | 25 Mar 2015 |
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 28 Feb 2020 | ||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 28 Feb 2020 | ||
| More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 29 Oct 2018 |
For additional terms or required resources, click any title below to view the detail page where available.
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| WSON (NGG) | 6 | Ultra Librarian |
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