SN74BCT2827C

Name: SN74BCT2827C
Brand: TI
SKU: SN74BCT2827C
Price: 2.392 USD

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10-ch, 4.5-V to 5.5-V buffers with 3-state outputs

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Data sheet

document-pdfAcrobat 10-Bit Bus/MOS Memory Drivers With 3-State Outputs datasheet (Rev. E)

SN74BCT2827C

ACTIVE

Data sheet

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Product details

Technology family

BCT

Supply voltage (min) (V)

4.5

Supply voltage (max) (V)

5.5

Number of channels

10

IOL (max) (mA)

12

Supply current (max) (µA)

40000

IOH (max) (mA)

-1

Input type

Bipolar

Output type

3-State

Features

Damping resistors, Over-voltage tolerant inputs, Power up 3-state, Very high speed (tpd 5-10ns)

Rating

Catalog

Operating temperature range (°C)

0 to 70

Technology family

BCT

Supply voltage (min) (V)

4.5

Supply voltage (max) (V)

5.5

Number of channels

10

IOL (max) (mA)

12

Supply current (max) (µA)

40000

IOH (max) (mA)

-1

Input type

Bipolar

Output type

3-State

Features

Damping resistors, Over-voltage tolerant inputs, Power up 3-state, Very high speed (tpd 5-10ns)

Rating

Catalog

Operating temperature range (°C)

0 to 70

BiCMOS Design Substantially Reduces I_CCZ
Output Ports Have Equivalent 25- Resistors; No External Resistors Are Required
Specifically Designed to Drive MOS DRAMs
3-State Outputs Drive Bus Lines or Buffer Memory Address Registers
Flow-Through Architecture Optimizes PCB Layout
Power-Up High-Impedance State
ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015
Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)

BiCMOS Design Substantially Reduces I_CCZ
Output Ports Have Equivalent 25- Resistors; No External Resistors Are Required
Specifically Designed to Drive MOS DRAMs
3-State Outputs Drive Bus Lines or Buffer Memory Address Registers
Flow-Through Architecture Optimizes PCB Layout
Power-Up High-Impedance State
ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015
Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)

These 10-bit buffers and bus drivers are specifically designed to drive the capacitive input characteristics of MOS DRAMs. They provide high-performance bus interface for wide data paths or buses carrying parity.

The 3-state control gate is a 2-input AND gate with active-low inputs so if either output-enable ( or ) input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down.

The SN54BCT2827C is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74BCT2827C is characterized for operation from 0°C to 70°C.

These 10-bit buffers and bus drivers are specifically designed to drive the capacitive input characteristics of MOS DRAMs. They provide high-performance bus interface for wide data paths or buses carrying parity.

The 3-state control gate is a 2-input AND gate with active-low inputs so if either output-enable ( or ) input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down.

The SN54BCT2827C is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74BCT2827C is characterized for operation from 0°C to 70°C.

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