產品詳細資料

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 44 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 10 Rail-to-rail No GBW (typ) (MHz) 3 Slew rate (typ) (V/µs) 15 Vos (offset voltage at 25°C) (max) (mV) 2 Iq per channel (typ) (mA) 2 Vn at 1 kHz (typ) (nV√Hz) 18 Rating Space Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 10 Input bias current (max) (pA) 200 CMRR (typ) (dB) 100 Iout (typ) (A) 0.025 Architecture FET Radiation, TID (typ) (krad) 100 Radiation, SEL (MeV·cm2/mg) Bipolar Input common mode headroom (to negative supply) (typ) (V) 3.5 Input common mode headroom (to positive supply) (typ) (V) 0.5 Output swing headroom (to negative supply) (typ) (V) 1.5 Output swing headroom (to positive supply) (typ) (V) -1.5
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 44 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 10 Rail-to-rail No GBW (typ) (MHz) 3 Slew rate (typ) (V/µs) 15 Vos (offset voltage at 25°C) (max) (mV) 2 Iq per channel (typ) (mA) 2 Vn at 1 kHz (typ) (nV√Hz) 18 Rating Space Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 10 Input bias current (max) (pA) 200 CMRR (typ) (dB) 100 Iout (typ) (A) 0.025 Architecture FET Radiation, TID (typ) (krad) 100 Radiation, SEL (MeV·cm2/mg) Bipolar Input common mode headroom (to negative supply) (typ) (V) 3.5 Input common mode headroom (to positive supply) (typ) (V) 0.5 Output swing headroom (to negative supply) (typ) (V) 1.5 Output swing headroom (to positive supply) (typ) (V) -1.5
CFP (NAC) 10 62.9285 mm² 9.91 x 6.35
  • Available with Radiation Specification
    • ELDRS FREE 100 krad(Si)
  • Internally Trimmed Offset Voltage: 0.5 mV(Typ)
  • Input Offset Voltage Drift: 10 μV/°C
  • Low Input Bias Current: 50 pA
  • Low Input Noise Current: 0.01 pA/√Hz
  • Wide Gain Bandwidth: 3 MHz
  • High Slew Rate: 10V/μs
  • Low Supply Current: 1.8 mA
  • High Input Impedance: 1012Ω
  • Low Total Harmonic Distortion: AV = 10, RL = 10KΩ, VO = 20VP-P, BW = 20Hz - 20KHz <0.02%
  • Low 1/f Noise Corner: 50 Hz
  • Fast Settling Time to 0.01%: 2 μs

All trademarks are the property of their respective owners.

  • Available with Radiation Specification
    • ELDRS FREE 100 krad(Si)
  • Internally Trimmed Offset Voltage: 0.5 mV(Typ)
  • Input Offset Voltage Drift: 10 μV/°C
  • Low Input Bias Current: 50 pA
  • Low Input Noise Current: 0.01 pA/√Hz
  • Wide Gain Bandwidth: 3 MHz
  • High Slew Rate: 10V/μs
  • Low Supply Current: 1.8 mA
  • High Input Impedance: 1012Ω
  • Low Total Harmonic Distortion: AV = 10, RL = 10KΩ, VO = 20VP-P, BW = 20Hz - 20KHz <0.02%
  • Low 1/f Noise Corner: 50 Hz
  • Fast Settling Time to 0.01%: 2 μs

All trademarks are the property of their respective owners.

This device is a low cost, high speed, JFET input operational amplifier with very low input offset voltage and ensured input offset voltage drift. It requires low supply current yet maintains a large gain bandwidth product and fast slew rate. In addition, well matched high voltage JFET input devices provide very low input bias and offset currents. The LF411QML is pin compatible with the standard LM741 allowing designers to immediately upgrade the overall performance of existing designs.

This amplifier may be used in applications such as high speed integrators, fast D/A converters, sample and hold circuits and many other circuits requiring low input offset voltage and drift, low input bias current, high input impedance, high slew rate and wide bandwidth.

This device is a low cost, high speed, JFET input operational amplifier with very low input offset voltage and ensured input offset voltage drift. It requires low supply current yet maintains a large gain bandwidth product and fast slew rate. In addition, well matched high voltage JFET input devices provide very low input bias and offset currents. The LF411QML is pin compatible with the standard LM741 allowing designers to immediately upgrade the overall performance of existing designs.

This amplifier may be used in applications such as high speed integrators, fast D/A converters, sample and hold circuits and many other circuits requiring low input offset voltage and drift, low input bias current, high input impedance, high slew rate and wide bandwidth.

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類型 標題 日期
* Data sheet LF411QML Low Offset, Low Drift JFET Input Operational Amplifier datasheet (Rev. C) 2013年 3月 26日
* SMD LF411QML-SP SMD 5962R1122201VZA 2016年 6月 21日
* Radiation & reliability report LF411MWGRLWQMLV TID Report 2012年 5月 9日
Application brief DLA Approved Optimizations for QML Products (Rev. A) PDF | HTML 2024年 6月 5日
Selection guide TI Space Products (Rev. J) 2024年 2月 12日
More literature TI Engineering Evaluation Units vs. MIL-PRF-38535 QML Class V Processing (Rev. A) 2023年 8月 31日
Application note Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. A) PDF | HTML 2022年 11月 17日
Application note Single-Event Effects Confidence Interval Calculations (Rev. A) PDF | HTML 2022年 10月 19日
Application brief Analog Front-End Design With Texas Instruments’ Tooling Landscape PDF | HTML 2022年 3月 7日
E-book The Signal e-book: A compendium of blog posts on op amp design topics 2017年 3月 28日

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