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TPD2EUSB30A

現行

適用 USB 3.0 且具有 5-A 突波額定值的雙 0.7-pF、3.6-V、±8-kV ESD 防護二極體

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產品規格表

TPD2EUSB30A

現行
產品規格表 立即訂購

產品詳細資料

Package name SOT-9X3 Peak pulse power (8/20 μs) (max) (W) 45 Vrwm (V) 3.6 Bi-/uni-directional Uni-Directional Number of channels 2 IO capacitance (typ) (pF) 0.7 IEC 61000-4-2 contact (±V) 8000 IEC 61000-4-5 (A) 5 Clamping voltage (V) 8 Dynamic resistance (typ) 0.6 Interface type Ethernet, LVDS, USB 2.0, USB 3.0 Breakdown voltage (min) (V) 4.5 IO leakage current (max) (nA) 100 Rating Catalog Operating temperature range (°C) -40 to 85
Package name SOT-9X3 Peak pulse power (8/20 μs) (max) (W) 45 Vrwm (V) 3.6 Bi-/uni-directional Uni-Directional Number of channels 2 IO capacitance (typ) (pF) 0.7 IEC 61000-4-2 contact (±V) 8000 IEC 61000-4-5 (A) 5 Clamping voltage (V) 8 Dynamic resistance (typ) 0.6 Interface type Ethernet, LVDS, USB 2.0, USB 3.0 Breakdown voltage (min) (V) 4.5 IO leakage current (max) (nA) 100 Rating Catalog Operating temperature range (°C) -40 to 85
SOT-9X3 (DRT) 3 1 mm² 1 x 1
  • Supports USB 3.0 data rates (5 Gbps)
  • IEC 61000-4-2 ESD protection (level 4 contact)
  • IEC 61000-4-5 surge protection
    • 5 A (8/20 µs)
  • Low capacitance
    • DRT: 0.7 pF (typical)
    • DQA: 0.8 pF (typical)
  • Dynamic resistance: 0.6 Ω (typical)
  • Space-saving DRT, DQA packages
  • Flow-through pin mapping
  • Supports USB 3.0 data rates (5 Gbps)
  • IEC 61000-4-2 ESD protection (level 4 contact)
  • IEC 61000-4-5 surge protection
    • 5 A (8/20 µs)
  • Low capacitance
    • DRT: 0.7 pF (typical)
    • DQA: 0.8 pF (typical)
  • Dynamic resistance: 0.6 Ω (typical)
  • Space-saving DRT, DQA packages
  • Flow-through pin mapping

The TPD2EUSB30, TPD2EUSB30A, and TPD4EUSB30 are 2 and 4 channel Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode arrays. The TPDxEUSB30/A devices are rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Contact). These devices also offer 5 A (8/20 µs) peak pulse current ratings per IEC 61000-4-5 (Surge) specification.

The TPD2EUSB30A offers low 4.5-V DC break-down voltage. The low capacitance, low break-down voltage, and low dynamic resistance make the TPD2EUSB30A a superior protection device for high-speed differential IOs.

The TPD2EUSB30 and TPD2EUSB30A are offered in space saving DRT (1 mm × 1 mm) package. The TPD4EUSB30 is offered in space saving DQA (2.5 mm × 1.0 mm) package.

The TPD2EUSB30, TPD2EUSB30A, and TPD4EUSB30 are 2 and 4 channel Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode arrays. The TPDxEUSB30/A devices are rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Contact). These devices also offer 5 A (8/20 µs) peak pulse current ratings per IEC 61000-4-5 (Surge) specification.

The TPD2EUSB30A offers low 4.5-V DC break-down voltage. The low capacitance, low break-down voltage, and low dynamic resistance make the TPD2EUSB30A a superior protection device for high-speed differential IOs.

The TPD2EUSB30 and TPD2EUSB30A are offered in space saving DRT (1 mm × 1 mm) package. The TPD4EUSB30 is offered in space saving DQA (2.5 mm × 1.0 mm) package.
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類型 標題 日期
* Data sheet TPDxEUSB30 2-, 4-Channel ESD Protection for Super-Speed USB 3.0 Interface datasheet (Rev. G) PDF | HTML 2021年 6月 1日
User guide Reading and Understanding an ESD Protection Data Sheet (Rev. A) PDF | HTML 2023年 9月 19日
Application note ESD Packaging and Layout Guide (Rev. B) PDF | HTML 2022年 8月 18日
Analog Design Journal Design Considerations for System-Level ESD Circuit Protection 2012年 9月 25日

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ESDEVM — ESD 評估模組

<p>靜電敏感裝置 (ESD) 評估模組 (EVM) 是我們大多數 ESD 產品組合的開發平台。此電路板配備所有傳統 ESD 元件封裝，可測試任意數量的裝置。裝置可以焊接到其相應的元件封裝上，然後進行測試。</p>
<p>對於一般高速 ESD 二極體，會實作阻抗控制的配置以取得 S 參數並取消內嵌電路板軌跡。對於非高速 ESD 二極體，其元件封裝會包含連接至測試點的軌跡，讓您輕鬆執行 DC 測試，例如崩潰電壓、保持電壓、洩漏等。電路板配置也可以透過將訊號針腳短路到訊號所在的任何地方，讓任何裝置針腳都能輕鬆地連接到電源 (V<sub>CC</sub>) 或接地。</p>

使用指南: PDF | HTML
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模擬型號

TPD2EUSB30A IBIS Model

SLVM401.ZIP (2 KB) - IBIS Model
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