TPS28225-Q1
- Qualified for automotive applications
- Drives two N-channel MOSFETs with 14-ns adaptive dead time
- Wide gate drive voltage: 4.5 V up to 8.8 V with best efficiency at 7 V to 8 V
- Wide power system train input voltage: 3 V up to 27 V
- Wide input PWM signals: 2-V up to 13.2-V amplitude
- Capable of driving MOSFETs with ≥40-A current per phase
- High frequency operation: 14-ns propagation delay and 10-ns rise or fall time allows FSW up to 2 MHz
- Capable of propagating <30-ns input PWM pulses
- Low-side driver sink on-resistance (0.4 Ω) prevents dV/dT related shoot-through current
- Three-state PWM input for power stage shutdown
- Space saving enable (input) and power good (output) signals on the same pin
- Thermal shutdown
- UVLO protection
- Internal bootstrap diode
- Economical SOIC-8 and thermally enhanced 3-mm × 3-mm VSON-8 packages
- High performance replacement for popular three-state input drivers
The TPS28225-Q1 is a high-speed driver for N-channel complementary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current, single and multi-phase DC-to-DC converters. The TPS28225-Q1 is highly efficient, has a small solution size and low-EMI emissions.
The TPS28225-Q1 device offers high performance features such as a 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capabilities. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor is charged by an internal diode which allows the use of an N-channel MOSFETs in a half-bridge configuration.
The TPS28225-Q1 is offered in an economical SOIC-8 package and in a thermally enhanced small sized VSON package. The driver is specified to operate in the temperature range of –40°C to 105°C with the absolute maximum junction temperature of 150°C.
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技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 日期 |
|---|---|---|---|---|
| * | Data sheet | TPS28225-Q1 Automotive High-Frequency 4-A Sink Synchronous MOSFET Drivers datasheet (Rev. D) | PDF | HTML | 2021年 12月 13日 |
| Application note | Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET | PDF | HTML | 2024年 3月 25日 | |
| Application note | Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) | PDF | HTML | 2023年 9月 8日 | |
| Application note | Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) | PDF | HTML | 2022年 2月 17日 | |
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020年 2月 28日 | ||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020年 2月 28日 | ||
| More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018年 10月 29日 |
設計與開發
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| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| SOIC (D) | 8 | Ultra Librarian |
| VSON (DRB) | 8 | Ultra Librarian |
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