9 Revision History
Changes from Revision J (July 2022) to Revision K (January 2024)
- Updated WEBENCH® links throughout the data sheet. Added "integrated
circuit" when the PowerPAD™ package is mentioned. Changed MOSFET resistance
110mΩ to100mΩ. Changed I
Q
from 18μA to 15μAGo
- Changed Pin Configuration figure title to "DDA Package 8-Pin SOIC
with Thermal Pad Top View" and repositioned the title to the correct position.
Changed "PowerPAD" to "DAP". Go
- Updated Absolute Maximum Ratings table to new format which does not include
specific parameter names and does include min and max columns. TJ called out in
header. Pin names are used rather than signal names. BOOT and PH voltages now marked as
output voltage. Updated footnotes and removed Note 2.Go
- Changed BOOT to PH Absolute Maximum from 10 V to 6 V.Go
- Changed PH to GND Absolute Maximum (transient < 10 ns) from -4 V to -1.2 V.Go
- Changed CDM ESD from ±1500 V to ±750 VGo
- Changed recommended operating "VI" to "input voltage".Go
- Updated thermal information footnotes to match current TI standards which include JEDEC standard information. Changed custom board information to EVM RθJA information.Go
- Changed RθJC(top) from 46.4 to 46, RθJB from 20.8 to 15, ψJT from 4.9 to 5.2, ψJB from 20.7 to 15.3, and RθJC(bot) from 0.8 to 6.Go
- Added condition for typical specifications EC table’s header, added parameter names, and used pin names in parameter descriptions. Footnote added.Go
- Changed test condition for VFB from “IO = 0 A to 3 A” to “TJ = –40°C to 125°C”, Changed rDS(ON) to RDSON(HS) and test condition to for RDSON(HS) from “VIN = 5.5 V” to “VIN = 5.5 V, VBOOT-SW = 4.0 V”.Go
- Changed the name of IQ to ISD(VIN) if ENA is low and IQ(VIN) if the chip is active.Go
- Added test condition for DMAX, “fSW = 500 kHz” and for second RDSON(HS) spec “VIN = 12 V, VBOOT-SW = 4.5 V”.Go
- Changed IQ(VIN) typical from 3 mA to 2 mA, ISD(VIN) typical from 18 µA to 15 µA, VINUVLO(H) from 330 mV to 0.35 V, and VEN(H) from 450 mV to 325 mV.Go
- Changed RDS(ON) with VIN = 5 V typical from 150 mΩ to 125 mΩ and with VIN = 12 V from 110 mΩ to 100 mΩGo
- Changed "110-mΩ high-side MOSFET"
to "100-mΩ high-side MOSFET" and 18 µA to 15 µA in Overview
Go
- Changed shutdown current from 18 μA to 15 μA in Enable (ENA) and
Internal Slow Start sectionGo
- Changed UVLO hysteresis from 330 mV to 350 mV in UVLO
description.Go
- Changed "PwPd" to "DAP" on the
TPS5430DDA package drawing in Figure 7-1 and "exposed PowerPAD™" to DAP in circuit description Go
- Changed "PwPd" to "DAP" on the
TPS5430DDA package drawing in Figure 7-9.Go
- Changed "PwPd" to "DAP" on the TPS5431DDA package drawing in Figure 7-10.Go
- Changed "PwPd" to "DAP" on the TPS5430DDA package drawing in Figure 7-11.Go
- Changed "PowerPAD" to "DAP" in
Layout Guidelines
Go
Changes from Revision I (April 2017) to Revision J (July 2022)
- Updated the numbering format for tables, figures, and
cross-references throughout the document.Go
Changes from Revision H (April 2016) to Revision I (March 2017)