12 Revision History
Changes from Revision C (November 2016) to Revision D (February 2024)
- ドキュメント全体にわたって表、図、相互参照の採番方法を更新Go
- CDCE913-Q1 の機能安全情報を追加Go
- I2C に言及している場合、すべての旧式の用語をコントローラおよびターゲットに変更Go
- 「製品情報」表を「パッケージ情報」に変更
Go
- Removed the thermal pad from the TSSOP pinoutGo
- Added Y1 to Y3 cycle-to-cycle jitter and Peak-to-peak period jitter
specs with tablenotes explaining the configuration differences Go
- Deleted sentence - A different default setting can be programmed
upon customer request. Contact Texas Instruments sales or marketing
representative for more information.Go
- Changed units from kbit/s to kbpsGo
- Added information on allowable data inputs during the EEPROM write cycle in Data Protocol
Go
Changes from Revision B (September 2016) to Revision C (November 2016)
- CDCEL913-Q1 デバイスのさまざまな温度範囲を明確化。Go
- Deleted old table notes from the Thermal Information table. Go
Changes from Revision A (June 2013) to Revision B (September 2016)
- 「機能説明」セクション、「デバイスの機能モード」セクション、「アプリケーションと実装」セクション、「電源に関する推奨事項」セクション、「レイアウト」セクション、「デバイスおよびドキュメントのサポート」セクション、「メカニカル、パッケージ、および注文情報」セクションを追加。
Go
- Changed ESD Ratings: Human-body model (HBM) from 2500 V to 2000 V
and Charged-device model (CDM) from 500 V to 1000 V.Go
- Changed second S to Sr in Byte Read
Protocol.Go
Changes from Revision * (June 2013) to Revision A (June 2013)
- CDM ESD 分類レベルを変更。Go
- Added ESD ratings.Go
- Changed IDDPD typical From: 20 To: 30Go
- Changed II LVCMOS input current value from typical to
maximum.Go
- Changed IIH LVCMOS input current for S0, S1, and S2 value
from typical to maximum.Go
- Changed IIL LVCMOS input current for S0, S1, and S2 value
from typical to maximum.Go
- Changed Test Load for 50-Ω Board
Environment.Go
- Changed Output Selection From: (Y2, Y9) To: (Y2,
Y3).Go
- Changed text note for Block Write Protocol.Go
- Changed 01h, Bit 7 From: For internal use – always
write 1 To: Reserved – always write 0.Go
- Changed 06h, 7:1 From: 30h To: 20hGo