4 改訂履歴
Changes from E Revision (February 2017) to F Revision
Changes from D Revision (July 2012) to E Revision
- 「ESD定格」表、「熱に関する情報」表、「機能説明」セクション、「デバイスの機能モード」セクション、「アプリケーションと実装」セクション、「電源に関する推奨事項」セクション、「レイアウト」セクション、「デバイスおよびドキュメントのサポート」セクション、「メカニカル、パッケージ、および注文情報」セクションを追加Go
Changes from C Revision (September 2011) to D Revision
- Added Operating voltage range to the RECOMMENDED OPERATING CONDITIONS tableGo
- Changed Supply Current Disabled Test Conditions From: VEN = Lo, VSENSE = VVCC = VOUT = 0 To: VEN = Lo, VSENSE = VVCC = VOUT Go
Changes from B Revision (March 2010) to C Revision
- Changed Figure 15, From: IIN = 5 A/div To: IIN = 0.5 A/divGo
Changes from A Revision (March 2010) to B Revision
- Added 「特長」に「カリキュレータ・ツールを利用可能」(SLVC033)をGo
- Added the Gate Capacitor (dV/dt) Control section: Revised text and Equation 5Go
Changes from * Revision (November 2003) to A Revision
- Deleted Lead temperature spec. from Abs Max Ratings tableGo
- Changed VPROG MIN voltage spec. from: 0 to: 0.4; added footnote (1) to the RECOMMENDED OPERATING CONDITIONS table Go
- Deleted footnote - Not tested in production from tF_TRIPGo
- Added clarification sentence to the GATE pin description, regarding adding capacitance. Go
- Changed V(VCC-OUT). to V(SENSE-OUT) in the OUT pin description. Go
- Changed from: (0–4 V) to: (0.4 – 4 V) in the PROG pin description Go
- Changed from: 2.5 V to: 2.7 V in the PG pin description.Go
- Added text to the PG pin description.Go
- Changed from: V(VCC–OUT) to: V(SENSE–OUT)Go
- Added text to the Gate Capacitor (dV/dt) Control section descriptionGo
- Added text to the High Gate Capacitance Applications section descriptionGo
- Added The Input Bypass section description.Go