JAJS463D NOVEMBER   2009  – March 2018 TPS40303 , TPS40304 , TPS40305

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      アプリケーション概略図
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Voltage Reference
      2. 7.3.2 Enable Functionality, Start-Up Sequence and Timing
      3. 7.3.3 Soft-Start Time
      4. 7.3.4 Oscillator and Frequency Spread Spectrum (FSS)
      5. 7.3.5 Overcurrent Protection
      6. 7.3.6 Drivers
      7. 7.3.7 Prebias Start-Up
      8. 7.3.8 Power Good
      9. 7.3.9 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Modes of Operation
        1. 7.4.1.1 UVLO
        2. 7.4.1.2 Disable
        3. 7.4.1.3 Calibration
        4. 7.4.1.4 Converting
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Using the TPS40305 for a 12-V to 1.8-V Point-of-Load Synchronous Buck Regulator
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1  Custom Design With WEBENCH® Tools
          2. 8.2.1.2.2  Selecting the Switching Frequency
          3. 8.2.1.2.3  Inductor Selection (L1)
          4. 8.2.1.2.4  Output Capacitor Selection (C12)
          5. 8.2.1.2.5  Peak Current Rating of Inductor
          6. 8.2.1.2.6  Input Capacitor Selection (C8)
          7. 8.2.1.2.7  MOSFET Switch Selection (Q1 and Q2)
          8. 8.2.1.2.8  Bootstrap Capacitor (C6)
          9. 8.2.1.2.9  VDD Bypass Capacitor (C7)
          10. 8.2.1.2.10 BP Bypass Capacitor (C5)
          11. 8.2.1.2.11 Short-Circuit Protection (R11)
          12. 8.2.1.2.12 Feedback Divider (R4, R5)
          13. 8.2.1.2.13 Compensation: (C2, C3, C4, R3, R6)
        3. 8.2.1.3 Application Curves
      2. 8.2.2 A High-Current, Low-Voltage Design Using the TPS40304
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1  Selecting the Switching Frequency
          2. 8.2.2.2.2  Inductor Selection (L1)
          3. 8.2.2.2.3  Output Capacitor Selection (C12)
          4. 8.2.2.2.4  Peak Current Rating of Inductor
          5. 8.2.2.2.5  Input Capacitor Selection (C8)
          6. 8.2.2.2.6  MOSFET Switch Selection (Q1 and Q2)
          7. 8.2.2.2.7  Bootstrap Capacitor (C6)
          8. 8.2.2.2.8  VDD Bypass Capacitor (C7)
          9. 8.2.2.2.9  BP Bypass Capacitor (C5)
          10. 8.2.2.2.10 Short-Circuit Protection (R11)
          11. 8.2.2.2.11 Feedback Divider (R4, R5)
          12. 8.2.2.2.12 Compensation: (C2, C3, C4, R3, R6)
        3. 8.2.2.3 Application Curves
      3. 8.2.3 A Synchronous Buck Application Using the TPS40303
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
          1. 8.2.3.2.1  Selecting the Switching Frequency
          2. 8.2.3.2.2  Inductor Selection (L1)
          3. 8.2.3.2.3  Output Capacitor Selection (C12)
          4. 8.2.3.2.4  Peak Current Rating of Inductor
          5. 8.2.3.2.5  Input Capacitor Selection (C8)
          6. 8.2.3.2.6  MOSFET Switch Selection (Q1 and Q2)
          7. 8.2.3.2.7  Bootstrap Capacitor (C6)
          8. 8.2.3.2.8  VDD Bypass Capacitor (C7)
          9. 8.2.3.2.9  BP Bypass Capacitor (C5)
          10. 8.2.3.2.10 Short-Circuit Protection (R11)
          11. 8.2.3.2.11 Feedback Divider (R4, R5)
          12. 8.2.3.2.12 Compensation: (C2, C3, C4, R3, R6)
        3. 8.2.3.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 デバイス・サポート
      1. 11.1.1 デベロッパー・ネットワークの製品に関する免責事項
    2. 11.2 WEBENCH®ツールによるカスタム設計
    3. 11.3 ドキュメントのサポート
      1. 11.3.1 関連資料
    4. 11.4 関連リンク
    5. 11.5 ドキュメントの更新通知を受け取る方法
    6. 11.6 コミュニティ・リソース
    7. 11.7 商標
    8. 11.8 静電気放電に関する注意事項
    9. 11.9 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

10.1 Layout Guidelines

  • For MOSFET or Power Block Layout, follow the layout recommendations provided for the MOSFET or Power Block selected.
  • Connect VDD to VIN as close as possible to the drain connection of the high-side FET to avoid introducing additional drop which could trigger short-circuit protection.
  • Place VDD and BP to GND capacitors within 2 mm of the device and connected to the Thermal Pad (GND).
  • The FB to GND resistor should connect to the thermal tab (GND) with a minimum 10-mil wide trace.
  • Place VOUT to FB resistor within 2 mm of the FB pin.
  • The EN/SS-to-GND capacitor must connect to the thermal tab (GND) with a minimum 10-mil-wide trace. It may share this trace with FB to GND.
  • If a BJT or MOSFET is used to disable EN/SS, place it within 5 mm of the device.
  • If a COMP to GND resistor is used, place it within 5 mm of the device.
  • All COMP and FB traces should be kept minimum line width and as short as possible to minimize noise coupling.
  • Do not route EN/SS more than 20 mm from the device.
  • If multiple layers are used, extend GND under all components connected to FB, COMP and EN/SS to reduce noise sensitivity.
  • HDRV and LDRV should provide short, low inductance paths of 5 mm or less to the gates of the MOSFETs or Power Block.
  • No more than 1 Ω of resistance should be placed between HDRV or LDRV and their MOSFET or Power Block gate pins.
  • LDRV / OC to GND Current Limit Programming resistor may be placed on the far side of the MOSFET if necessary to ensure a short connection from LDRV to the gate of the low-side MOSFET.
  • The BOOT to SW resistor and capacitor should both be placed within 4 mm of the device using a minimum of 10-mil-wide trace. The full width of the component pads are preferred for trace widths if design rules allow.
  • If via must be used between the HDRV, SW and LDRV pins and their respective MOSFET or Power Block connections, use a minimum of two vias to reduce parasitic inductance
  • Refer to the Land Pattern Data for the preferred layout of thermal vias within the thermal pad.
  • It is recommended to extend the top-layer copper area of the thermal pad (GND) beyond the package a minimum 3 mm between pins 1 and 10 and 5 and 6 to improve thermal resistance to ambient of the device.