JAJSMH6F July   2021  – August 2024 TPS7H5001-SP , TPS7H5002-SP , TPS7H5003-SP , TPS7H5004-SP

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Device Comparison Table
  6. 5 Device Options
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics: All Devices
    6. 7.6  Electrical Characteristics: TPS7H5001-SP
    7. 7.7  Electrical Characteristics: TPS7H5002-SP
    8. 7.8  Electrical Characteristics: TPS7H5003-SP
    9. 7.9  Electrical Characteristics: TPS7H5004-SP
    10. 7.10 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  VIN and VLDO
      2. 8.3.2  Start-Up
      3. 8.3.3  Enable and Undervoltage Lockout (UVLO)
      4. 8.3.4  Voltage Reference
      5. 8.3.5  Error Amplifier
      6. 8.3.6  Output Voltage Programming
      7. 8.3.7  Soft Start (SS)
      8. 8.3.8  Switching Frequency and External Synchronization
        1. 8.3.8.1 Internal Oscillator Mode
        2. 8.3.8.2 External Synchronization Mode
        3. 8.3.8.3 Primary-Secondary Mode
      9. 8.3.9  Primary Switching Outputs (OUTA/OUTB)
      10. 8.3.10 Synchronous Rectifier Outputs (SRA and SRB)
      11. 8.3.11 Dead Time and Leading Edge Blank Time Programmability (PS, SP, and LEB)
      12. 8.3.12 Pulse Skipping
      13. 8.3.13 Duty Cycle Programmability
      14. 8.3.14 Current Sense and PWM Generation (CS_ILIM)
      15. 8.3.15 Hiccup Mode Operation (HICC)
      16. 8.3.16 External Fault Protection (FAULT)
      17. 8.3.17 Slope Compensation (RSC)
      18. 8.3.18 Frequency Compensation
      19. 8.3.19 Thermal Shutdown
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Switching Frequency
        2. 9.2.2.2  Output Voltage Programming Resistors
        3. 9.2.2.3  Dead Time
        4. 9.2.2.4  Leading Edge Blank Time
        5. 9.2.2.5  Soft-Start Capacitor
        6. 9.2.2.6  Transformer
        7. 9.2.2.7  Main Switching FETs
        8. 9.2.2.8  Synchronous Rectificier FETs
        9. 9.2.2.9  RCD Clamp
        10. 9.2.2.10 Output Inductor
        11. 9.2.2.11 Output Capacitance and Filter
        12. 9.2.2.12 Sense Resistor
        13. 9.2.2.13 Hiccup Capacitor
        14. 9.2.2.14 Frequency Compensation Components
        15. 9.2.2.15 Slope Compensation Resistor
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 ドキュメントの更新通知を受け取る方法
    3. 10.3 サポート・リソース
    4. 10.4 Trademarks
    5. 10.5 静電気放電に関する注意事項
    6. 10.6 用語集
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • HFT|22
  • KGD|0
  • PW|24
サーマルパッド・メカニカル・データ
発注情報

9.2.2.3 Dead Time

For GaN power semiconductor devices, a key characteristic that has to be taken into consideration is the voltage drop of the GaN FET while it is operating in reverse conduction mode. While the GaN FET does not have a body diode that is inherent in the silicon FET, it does still have the ability to conduct current in the reverse direction with behavior that is similar to a diode. When conducting in the reverse direction, the source-drain voltage of the GaN FET can be quite large. Thus, to reduce the dead-time losses and maximize efficiency, the dead time was set to a value of approximately 25 ns. Based on the selected value, Equation 8 can be used to calculate the resistors needed to attain the desired dead time.

Equation 27. TPS7H5001-SP TPS7H5002-SP TPS7H5003-SP TPS7H5004-SP

The standard resistor value of 20.5 kΩ was selected for both RPS and RSP.