SLUSB86C November   2012  – June 2017 UCC28710 , UCC28711 , UCC28712 , UCC28713

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Detailed Pin Description
        1. 8.3.1.1 VDD (Device Bias Voltage Supply)
        2. 8.3.1.2 GND (Ground)
        3. 8.3.1.3 VS (Voltage-Sense)
        4. 8.3.1.4 DRV (Gate Drive)
        5. 8.3.1.5 CS (Current Sense)
        6. 8.3.1.6 CBC (Cable Compensation), Pin 1 UCC28700
        7. 8.3.1.7 NTC (NTC Thermistor Shut-down), Pin 1 UCC28701/2/3
      2. 8.3.2 Fault Protection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Primary-Side Voltage Regulation
      2. 8.4.2 Primary-Side Current Regulation
      3. 8.4.3 Valley Switching
      4. 8.4.4 Start-Up Operation
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Custom Design With WEBENCH® Tools
        2. 9.2.2.2 Stand-by Power Estimate
        3. 9.2.2.3 Input Bulk Capacitance and Minimum Bulk Voltage
        4. 9.2.2.4 Transformer Turns Ratio, Inductance, Primary-Peak Current
        5. 9.2.2.5 Transformer Parameter Verification
        6. 9.2.2.6 Output Capacitance
        7. 9.2.2.7 VDD Capacitance, CDD
        8. 9.2.2.8 VS Resistor Divider, Line Compensation, and Cable Compensation
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
        1. 12.1.1.1 Custom Design With WEBENCH® Tools
      2. 12.1.2 Device Nomenclature
        1. 12.1.2.1  Capacitance Terms in Farads
        2. 12.1.2.2  Duty Cycle Terms
        3. 12.1.2.3  Frequency Terms in Hertz
        4. 12.1.2.4  Current Terms in Amperes
        5. 12.1.2.5  Current and Voltage Scaling Terms
        6. 12.1.2.6  Transformer Terms
        7. 12.1.2.7  Power Terms in Watts
        8. 12.1.2.8  Resistance Terms in Ω
        9. 12.1.2.9  Timing Terms in Seconds
        10. 12.1.2.10 Voltage Terms in Volts
        11. 12.1.2.11 AC Voltage Terms in VRMS
        12. 12.1.2.12 Efficiency Terms
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
      2. 12.2.2 Related Links
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • D|7
サーマルパッド・メカニカル・データ
発注情報

Device and Documentation Support

Device Support

Development Support

For design tools see the UCC2871x Calculator, UCC2871x PSpice Transient Model, UCC2871x TINA-TI Transient Spice Model, and UCC2871x TINA-TI Transient Reference Design.

Custom Design With WEBENCH® Tools

Click here to create a custom design using the UCC28710 device with the WEBENCH® Power Designer.

  1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.
  2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.
  3. Compare the generated design with other possible solutions from Texas Instruments.

The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time pricing and component availability.

In most cases, these actions are available:

  • Run electrical simulations to see important waveforms and circuit performance
  • Run thermal simulations to understand board thermal performance
  • Export customized schematic and layout into popular CAD formats
  • Print PDF reports for the design, and share the design with colleagues

Get more information about WEBENCH tools at www.ti.com/WEBENCH.

Device Nomenclature

Capacitance Terms in Farads

  • CBULK: total input capacitance of CB1 and CB2.
  • CDD: minimum required capacitance on the VDD pin.
  • COUT: minimum output capacitance required.

Duty Cycle Terms

  • DMAGCC: secondary diode conduction duty cycle in CC, 0.425.
  • DMAX: MOSFET on-time duty cycle.

Frequency Terms in Hertz

  • fLINE: minimum line frequency.
  • fMAX: target full-load maximum switching frequency of the converter.
  • fMIN: minimum switching frequency of the converter, add 15% margin over the fSW(min) limit of the device.
  • fSW(min): minimum switching frequency (see Electrical Characteristics).

Current Terms in Amperes

  • IOCC: converter output constant-current target.
  • IPP(max): maximum transformer primary current.
  • ISTART: start-up bias supply current (see Electrical Characteristics).
  • ITRAN: required positive load-step current.
  • IVSL(run): VS pin run current (see Electrical Characteristics).

Current and Voltage Scaling Terms

Transformer Terms

  • LP: transformer primary inductance.
  • NAS: transformer auxiliary-to-secondary turns ratio.
  • NPA: transformer primary-to-auxiliary turns ratio.
  • NPS: transformer primary-to-secondary turns ratio.

Power Terms in Watts

  • PIN: converter maximum input power.
  • POUT: full-load output power of the converter.
  • PRSTR: VDD start-up resistor power dissipation.
  • PSB: total stand-by power.
  • PSB_CONV: PSB minus start-up resistor and snubber losses.

Resistance Terms in Ω

  • RCS: primary current programming resistance.
  • RESR: total ESR of the output capacitor(s).
  • RPL: preload resistance on the output of the converter.
  • RS1: high-side VS pin resistance.
  • RS2: low-side VS pin resistance.

Timing Terms in Seconds

  • tD: current-sense delay including MOSFET turn-off delay; add 50 ns to MOSFET delay.
  • tDMAG(min): minimum secondary rectifier conduction time.
  • tON(min): minimum MOSFET on time.
  • tR: resonant frequency during the DCM (discontinuous conduction mode) time.

Voltage Terms in Volts

  • VBLK: highest bulk capacitor voltage for stand-by power measurement.
  • VBULK(min): minimum voltage on CB1 and CB2 at full power.
  • VOCBC: target cable compensation voltage at the output terminals.
  • VCBC(max): maximum voltage at the CBC pin at the maximum converter output current (see Electrical Characteristics).
  • VCCR: constant-current regulating voltage (see Electrical Characteristics).
  • VCST(max): CS pin maximum current-sense threshold (see Electrical Characteristics).
  • VCST(min): CS pin minimum current-sense threshold (see Electrical Characteristics).
  • VDD(off): UVLO turn-off voltage (see Electrical Characteristics).
  • VDD(on): UVLO turn-on voltage (see Electrical Characteristics).
  • V: output voltage drop allowed during the load-step transient.
  • VDSPK: peak MOSFET drain-to-source voltage at high line.
  • VF: secondary rectifier forward voltage drop at near-zero current.
  • VFA: auxiliary rectifier forward voltage drop.
  • VLK: estimated leakage inductance energy reset voltage.
  • VOCV: regulated output voltage of the converter.
  • VOCC: target lowest converter output voltage in constant-current regulation.
  • VREV: peak reverse voltage on the secondary rectifier.
  • VRIPPLE: output peak-to-peak ripple voltage at full-load.
  • VVSR: CV regulating level at the VS input (see Electrical Characteristics).

AC Voltage Terms in VRMS

  • VIN(max): maximum input voltage to the converter.
  • VIN(min): minimum input voltage to the converter.
  • VIN(run): converter input start-up (run) voltage.

Efficiency Terms

  • ηSB: estimated efficiency of the converter at no-load condition, not including start-up resistance or bias losses. For a 5-V USB charger application, 60% to 65% is a good initial estimate.
  • η: converter overall efficiency.
  • ηXFMR: transformer primary-to-secondary power transfer efficiency.

Documentation Support

Related Links

The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy.

Table 2. Related Links

PARTS PRODUCT FOLDER ORDER NOW TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY
UCC28710 Click here Click here Click here Click here Click here
UCC28711 Click here Click here Click here Click here Click here
UCC28712 Click here Click here Click here Click here Click here
UCC28713 Click here Click here Click here Click here Click here

Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.

Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

Trademarks

E2E is a trademark of Texas Instruments.

WEBENCH is a registered trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

Glossary

SLYZ022TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.