SLAAEI9 December 2023 MSPM0C1103 , MSPM0C1104 , MSPM0C1104-Q1 , MSPM0G1105 , MSPM0G1106 , MSPM0G1107 , MSPM0G1505 , MSPM0G1506 , MSPM0G1507 , MSPM0G3105 , MSPM0G3105-Q1 , MSPM0G3106 , MSPM0G3106-Q1 , MSPM0G3107 , MSPM0G3107-Q1 , MSPM0G3505 , MSPM0G3505-Q1 , MSPM0G3506 , MSPM0G3506-Q1 , MSPM0G3507 , MSPM0G3507-Q1 , MSPM0L1105 , MSPM0L1106 , MSPM0L1228
The MSPM0 and STM8 family of MCUs feature nonvolatile flash and EEPROM memory used for storing executable program code and application data. Table 3-2 shows the features of flash and EEPROM. Note that not all the devices have all features. For details, see the device-specific data sheet.
Features | STM8L & STM8S | MSPM0L & MSPM0C | ||
---|---|---|---|---|
Flash memory | STM8Lxx ranges 2 KB to 64 KB STM8Sxx ranges 4 KB to 128 KB |
MSPM0Lxx ranges 8 KB to 64
KB MSPM0Cxx 8 KB or 16 KB |
||
EEPROM | up to 2 KB | EEPROM emulation using Flash | ||
Memory organization | Block size (64 B/128 B) Page size (a set of blocks) |
Word line (128B) Sector size (1 KB) Bank size (variable): Device up to 256 KB-1bank |
||
Wait states | 0 (fCPU
< 16 MHz) 1 (fCPU > 16 MHz) |
0 (MCLK, CPUCLK < 24
MHz) 1 (MCLK, CPUCLK < 48 MHz) |
||
Single word size | 32 bits | 64 bits (72 bits with ECC) | ||
Programming mode | Byte, single flash word, block | Resolution | Single flash word, 32-, 16-, or 8-bit | |
Multi-word | 2, 4, or 8 words (up to 64 bytes) | |||
Erase | Block erease | Sector erase Bank erase (up to 256 KB) |
||
Error code correction |
Supported | Supported | ||
Write Protection | Yes | Yes, static and dynamic | ||
Read Protection | Yes | Yes | ||
Erase/Write Cycles | Program memory | 100 | 100k (lower 32 KB) or 10k (above 32 KB) | |
Data memory | 100k |
In addition to the flash memory features listed in the previous table, the MSPM0 flash also has the following features:
In-circuit program and erase supported across the entire supply voltage range.