The board level extraction guidelines
listed below are intended to work in any EDA extraction tool and are not
tool-specific. It is important to follow the steps outlined in Section 4.2 through Section 4.4 immediately after completing touchstone model extractions. The design should be
checked with these steps prior to running IBIS simulations.
- For high speed serial interface extractions, there is no need
to extract power and signal nets together in a 3D-EM solver. Simulations are
only intended for Signal Integrity.
- Use wide-band models. It is recommended to extract from DC to
at least till 6x the Nyquist frequency (for USB3.1 Gen 1, extract the model at
least till 15GHz).
- Check the board stack-up for accurate layer thickness and
material properties.
- It is recommended to use Djordjevic-Sarkar models for
the dielectric material definition.
- Use accurate etch profiles and surface roughness for the signal
traces across all layers in the stack-up.
- If the board layout is cut prior to extraction (to reduce
simulation time), please define a cut boundary that is at least 0.25 inch away
from the signal and power nets.
- Check the via padstack definitions
- Ensure that the non-functional internal layer pads on
signal vias are modeled the same way they would be fabricated.
- These non-functional internal layer pads on signal vias
are not recommended by TI
- Use Spice/S-parameter models (typically available from the
vendor) for modeling all passives in the system