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  • TPS7H5001-SP, TPS7H5002-SP,TPS7H5003-SP and TPS7H5004-SP Single-Event Effects (SEE)

    • SLVK099B March   2022  – September 2023 TPS7H5001-SP , TPS7H5002-SP , TPS7H5003-SP , TPS7H5004-SP

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  • TPS7H5001-SP, TPS7H5002-SP,TPS7H5003-SP and TPS7H5004-SP Single-Event Effects (SEE)
  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-Up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
    1. 8.1 System Level Implications
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A Total Ionizing Dose from SEE Experiments
  15.   B References
  16.   C Revision History
  17. IMPORTANT NOTICE
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Radiation Report

TPS7H5001-SP, TPS7H5002-SP,TPS7H5003-SP and TPS7H5004-SP Single-Event Effects (SEE)

Abstract

The purpose of this study is to characterize the single-event-effects (SEE) performance due to heavy-ion irradiation of the TPS7H500x-SP. Destructive single-event-effects (DSEE) performance was verified at the maximum recommended voltage of 14 V. SET performance was verified over a variety of different operating conditions including: internal and external clock, FSW = 1 and 2 MHz, error amp (in unity gain), and cross conduction. For the transient characterization, input voltages of 4, 12, and 14 V were used (For TPS7H5002/3/4- SP only a nominal VIN of 12 V was used). Heavy-ions with LETEFF of 30.5 to 75 MeV·cm2/mg were used during the validation. A total of 11 devices were used for the data collection. Flux of ≈105 ions/cm2·s and fluences of ≈107 ions/cm2 per run were used for the characterization. The results demonstrated that the TPS7H500x-SP is SEL and SEB/SEGR free up to 75 MeV·cm2/mg, at T = 125°C and T = 25°C, respectively, and across the full electrical specifications. SET characterization is presented and discussed for a variety of different operating conditions. This report uses the QMLV TPS7H500X-SP device in a ceramic package. The report is also applicable for the QMLP TPS7H500X-SP device in a plastic package which uses the same die as the QMLV device.

Trademarks

National Instruments™ and LabVIEW™ are trademarks of National Instruments.

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All trademarks are the property of their respective owners.

1 Introduction

The TPS7H500x-SP series (consisting of TPS7H5001-SP, TPS7H5002-SP, TPS7H5003-SP, and TPS7H5004- SP) is a family of high speed radiation-hardness-assured PWM controllers. The TPS7H5001-SP is the parent device with only interconnect differences to support the reduction of features for TPS7H5002/3/4-SP. The controllers provide a number of features that are beneficial for the design of DC-DC converter topologies intended for space applications. The controllers have a 0.613 V ±1 % accurate internal reference and configurable switching frequency up to 2 MHz. Each device offers programmable slope compensation and soft-start. The TPS7H500x-SP series can be driven using an external clock through the SYNC pin or by using the internal oscillator at a frequency programmed by the user. The controller family offers the user various options for switching outputs, synchronous rectification capability, dead time (fixed or configurable), leading edge blank time (fixed or configurable), and duty cycle limit. Each device in the TPS7H500x-SP series has a 22-pin CFP package.

Table 1-1 lists general device information and test conditions For more detailed technical specifications, user guides, and application notes, see the TPS7H500x-SP product page.

Table 1-1 Overview Information
Description(1)Device Information
TI Part NumberTPS7H500x-SP
Orderable Number5962R1822201VXC
Device FunctionSi and GaN dual output controller
TechnologyLBC7
Exposure FacilityRadiation Effects Facility, Cyclotron Institute, Texas A&M University (25 and 15 MeV/nucleon)
Heavy Ion Fluence per Run9.96 × 105 – 1.01 × 107 ions/cm2
Irradiation Temperature25°C (for SEB/SEGR testing), 25°C (for SET testing), and 125°C (for SEL testing)
(1) TI may provide technical, applications or design advice, quality characterization, and reliability data or service, providing these items shall not expand or otherwise affect TI's warranties as set forth in the Texas Instruments Incorporated Standard Terms and Conditions of Sale for Semiconductor Products and no obligation or liability shall arise from Semiconductor Products and no obligation or liability shall arise from TI's provision of such items.

Each TPS7H500x-SP device has a special set of outputs, configurations, and settings. From device to device, the number of outputs, dead-time and leading edge blank time configurability, and duty cycle limit options can vary. The table below gives a breakdown of each device in the TPS500x-SP series.

Table 1-2 TPS7H500x-SP Device Comparison Table
Device Primary Outputs Synchronous Rectifier Outputs Dead-Time Setting Leading Edge Blank Time Setting Duty Cycle Limit Options
TPS7H5001-SP 2 2 Resistor Programmable Resistor Programmable 50%, 75%, 100%
TPS7H5002-SP 1 1 Resistor Programmable Resistor Programmable 75%, 100%
TPS7H5003-SP 1 1 Fixed (50-ns typical) Fixed (50-ns typical) 75%, 100%
TPS7H5004-SP 2 0 Not Applicable Resistor Programmable 50%

 
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