SLAAEB4 april   2023 MSPM0G1105 , MSPM0G1106 , MSPM0G1107 , MSPM0G1505 , MSPM0G1506 , MSPM0G1507 , MSPM0G3105 , MSPM0G3106 , MSPM0G3107 , MSPM0G3505 , MSPM0G3506 , MSPM0G3507 , MSPM0L1105 , MSPM0L1106 , MSPM0L1303 , MSPM0L1304 , MSPM0L1304-Q1 , MSPM0L1305-Q1 , MSPM0L1306 , MSPM0L1306-Q1 , MSPM0L1343 , MSPM0L1344 , MSPM0L1345 , MSPM0L1346

 

  1.   Abstract
  2.   Trademarks
  3. 1Introduction
    1. 1.1 Difference Between EEPROM and On-Chip Flash
  4. 2Implementation
    1. 2.1 Principle
    2. 2.2 Header
  5. 3Software Description
    1. 3.1 Software Functionality and Flow
    2. 3.2 EEPROM Functions
      1. 3.2.1 Global Variables
      2. 3.2.2 EEPROM_TypeB_readDataItem
      3. 3.2.3 EEPROM_TypeB_findDataItem
      4. 3.2.4 EEPROM_TypeB_write
      5. 3.2.5 EEPROM_TypeB_transferDataItem
      6. 3.2.6 EEPROM_TypeB_eraseGroup
      7. 3.2.7 EEPROM_TypeB_init
    3. 3.3 Application Integration
    4. 3.4 EEPROM Emulation Memory Footprint
    5. 3.5 EEPROM Emulation Timing
  6. 4Application Aspects
    1. 4.1 Selection of Configurable Parameters
      1. 4.1.1 Number of Data Items
      2. 4.1.2 Cycling Capability
    2. 4.2 Recovery in Case of Power Loss
  7. 5References

EEPROM_TypeB_eraseGroup

EEPROM_TypeB_eraseGroup is used to erase the Erasing groups. After calling EEPROM_TypeB_transferDataItem, gEEPROMTypeBEraseFlag is set. It prompts the user that there is an Erasing group. It is recommended to call the EEPROM_TypeB_eraseGroup immediately when gEEPROMTypeBEraseFlag is set, as in Figure 3-1. However, users can change the timepoint to erase by modifying the high-level software flow.

The output of the function is the operation states.

  • Input: void
  • Output:uint32_t operation state