SLAU847D October 2022 – May 2024 MSPM0L1105 , MSPM0L1106 , MSPM0L1227 , MSPM0L1228 , MSPM0L1228-Q1 , MSPM0L1303 , MSPM0L1304 , MSPM0L1304-Q1 , MSPM0L1305 , MSPM0L1305-Q1 , MSPM0L1306 , MSPM0L1306-Q1 , MSPM0L1343 , MSPM0L1344 , MSPM0L1345 , MSPM0L1346 , MSPM0L2227 , MSPM0L2228 , MSPM0L2228-Q1
The program command is used to write (program) the flash memory. Specifically, the purpose of a PROGRAM operation is to configure the flash bits in one or more flash words from the nondeterministic erased state to the deterministic programmed state. Once a byte is programmed using the PROGRAM command, the byte can not be re-programmed unless the sector is erased using the ERASE command.
All devices support single flash word programming of 64 data bits (plus 8 ECC bits on devices with ECC) at a time, with control to limit the scope of a program operation to specific bytes within a 64-bit flash word.
Some devices additionally have support for a multi-word programming mode where 2, 4, or 8 flash words can be written with a single commanded operation. Multi-word programming, when available, significantly speeds up programming when multiple words need to be programmed (for example, during production programming or firmware updates). See the device-specific data sheet to determine if multi-word programming is supported, and if so, how many flash word buffers are provided.