SLPA021 November   2024 CSD13303W1015 , CSD16301Q2 , CSD16321Q5 , CSD16322Q5 , CSD16323Q3 , CSD16325Q5 , CSD16327Q3 , CSD16340Q3 , CSD16342Q5A , CSD16401Q5 , CSD16403Q5A , CSD16404Q5A , CSD16406Q3 , CSD16407Q5 , CSD16408Q5 , CSD16409Q3 , CSD16410Q5A , CSD16411Q3 , CSD16412Q5A , CSD16413Q5A , CSD16414Q5 , CSD16415Q5 , CSD16556Q5B , CSD17301Q5A , CSD17302Q5A , CSD17303Q5 , CSD17304Q3 , CSD17305Q5A , CSD17306Q5A , CSD17307Q5A , CSD17308Q3 , CSD17309Q3 , CSD17310Q5A , CSD17311Q5 , CSD17312Q5 , CSD17313Q2 , CSD17322Q5A , CSD17327Q5A , CSD17381F4 , CSD17501Q5A , CSD17505Q5A , CSD17506Q5A , CSD17507Q5A , CSD17510Q5A , CSD17522Q5A , CSD17527Q5A , CSD17551Q3A , CSD17551Q5A , CSD17552Q3A , CSD17552Q5A , CSD17553Q5A , CSD17555Q5A , CSD17556Q5B , CSD17559Q5 , CSD18501Q5A , CSD18502KCS , CSD18502Q5B , CSD18503KCS , CSD18503Q5A , CSD18504KCS , CSD18504Q5A , CSD18531Q5A , CSD18532KCS , CSD18532NQ5B , CSD18532Q5B , CSD18533KCS , CSD18533Q5A , CSD18534KCS , CSD18534Q5A , CSD18537NKCS , CSD18537NQ5A , CSD18563Q5A , CSD22202W15 , CSD25211W1015 , CSD25213W10 , CSD75207W15 , CSD86311W1723 , CSD86330Q3D , CSD86350Q5D , CSD86360Q5D , CSD87312Q3E , CSD87330Q3D , CSD87331Q3D , CSD87350Q5D , CSD87351Q5D , CSD87351ZQ5D , CSD87352Q5D , CSD87353Q5D , CSD87381P , CSD87588N

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2Review the Data Sheet Limits
  6. 3Application-specific FETs
  7. 4Gate Drive Voltage Specifications
    1. 4.1 Absolute maximum VGS
    2. 4.2 Gate-to-source Threshold Voltage, VGS(th)
  8. 5High-side and Low-side Switches
    1. 5.1 Driving a High-side N-channel FET
    2. 5.2 Driving a Low-side N-channel FET
    3. 5.3 Driving a High-side P-channel FET
  9. 6Use a Gate-to-source Resistor
  10. 7Lowest RDS(on)≠ Lowest Power Loss
  11. 8Summary
  12. 9References

4.1 Absolute maximum VGS

The absolute maximum VGS rating can be a single value or separate positive and negative values depending on the gate structure. As detailed in the What type of ESD protection does your MOSFET include? technical article, TI FETs can have single-ended, back-to-back or no gate ESD protection. FETs with a single-ended ESD structure only have a single value for absolute maximum VGS. Applying a voltage of the opposite polarity forward biases the gate-to-source ESD diode allowing current to flow into the gate and clamping VGS at a junction drop. An external gate resistor can be added to limit the gate current and prevent damaging the FET.

Devices with back-to-back or no ESD protection have separate positive and negative absolute maximum VGS values that can be symmetric (that is, ±20V) or asymmetric (that is, -12V/+16V). Never operate the FET with VGS in excess of the absolute maximum specifications or the FET can be damaged.

Table 4-1, Table 4-2, and Table 4-3 show examples of the absolute maximum ratings for the following TI N-channel MOSFETs:

Table 4-1 CSD17581Q5A Absolute Maximum Ratings
TA = 25°C VALUE UNIT
VDS Drain-to-source voltage 30 V
VGS Gate-to-source voltage ±20 V
ID Continuous drain current (package limited) 60 A
Continuous drain current (silicon limited), TC = 25°C 123
Continuous drain current 24
IDM Pulsed drain current 256 A
PD Power dissipation 3.1 W
Power dissipation, TC = 25°C 83
TJ,
Tstg		 Operating junction temperature and storage temperature –55 to 150 °C
EAS Avalanche energy, single pulse
ID = 39A, L = 0.1 mH, RG = 25Ω		 76 mJ
Table 4-2 CSD17381F4 Absolute Maximum Ratings
TA = 25°C unless otherwise stated VALUE UNIT
VDS Drain-to-source voltage 30 V
VGS Gate-to-source voltage 12 V
ID Continuous drain current, TA = 25°C 3.1 A
IDM Pulsed Drain Current, TA = 25°C 12 A
IG Continuous gate clamp current 35 mA
Pulsed gate clamp current 350
PD Power dissipation 500 mW
ESD Rating Human body model (HBM) 4 kV
Charged device model (CDM) 2 kV
TJ,
Tstg		 Operating junction and storage temperature range –55 to 150 °C
EAS Avalanche energy, single pulse ID = 7.4A,
L = 0.1mH, RG = 25Ω		 2.7 mJ
Table 4-3 CSD16415Q5 Absolute Maximum Ratings
TA = 25°C VALUE UNIT
VDS Drain-to-source voltage 25 V
VGS Gate-to-source voltage –12 to 16 V
ID Continuous drain current (package limited) 100 A
Continuous drain current (silicon limited), TC = 25°C 261
Continuous drain current 38
IDM Pulsed drain current, TA = 25°C 200 A
PD Power dissipation 3.2 W
Power dissipation, TC = 25°C 156
TJ,
Tstg		 Operating junction temperature and storage temperature –55 to 150 °C
EAS Avalanche energy, single-pulse
ID = 100A, L = 0.1mH, RG = 25Ω		 500 mJ