SLUAAY2 December 2024 ISO5451 , ISO5451-Q1 , ISO5452 , ISO5452-Q1 , ISO5851 , ISO5851-Q1 , ISO5852S , ISO5852S-EP , ISO5852S-Q1 , UCC21710 , UCC21710-Q1 , UCC21717-Q1 , UCC21732 , UCC21732-Q1 , UCC21736-Q1 , UCC21737-Q1 , UCC21738-Q1 , UCC21739-Q1 , UCC21750 , UCC21750-Q1 , UCC21755-Q1 , UCC21756-Q1 , UCC21759-Q1
Isolated gate drivers are commonly used in automotive and industrial high-power systems such as HEV/EV traction inverters, solar inverters, and motor drives. In these applications, silicon carbide (SiC) MOSFETs and Si IGBTs are usually ideal candidates; their abilities to handle high voltage, high current are beneficial in high power systems in the hundreds of kW range. All the high-power applications use power modules with increased voltage and current capability.
This application note talks about some of the common failure modes of the SiC and IGBT power switches, characteristics, the best suitable protection approach based on the power module type and the protection circuit component design aspects.