SLUAAY2 December   2024 ISO5451 , ISO5451-Q1 , ISO5452 , ISO5452-Q1 , ISO5851 , ISO5851-Q1 , ISO5852S , ISO5852S-EP , ISO5852S-Q1 , UCC21710 , UCC21710-Q1 , UCC21717-Q1 , UCC21732 , UCC21732-Q1 , UCC21736-Q1 , UCC21737-Q1 , UCC21738-Q1 , UCC21739-Q1 , UCC21750 , UCC21750-Q1 , UCC21755-Q1 , UCC21756-Q1 , UCC21759-Q1

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 SiC and IGBT Characteristics
  6. 3 Failure Modes
  7. 4 Short-Circuit Protection Approaches
    1. 4.1 Short-Circuit Current-Based Protection Implementation
    2. 4.2 Short Circuit Voltage-Based Protection Implementation
  8. 5 DESAT Circuitry Design
    1. 5.1 DESAT Circuit Component Selection
    2. 5.2 Effect of Parasitic Elements
    3. 5.3 Effect of Rlim on DESAT Noise
  9. 6 Safe Shutdown
    1. 6.1 Safe Shutdown Mechanisms
    2. 6.2 Safe Shutdown Considerations
  10. 7 Short-Circuit Test Setup and Data
    1. 7.1 Short-Circuit Bench Measurement Setup
    2. 7.2 SC Board Setup for Data Collection
    3. 7.3 Different Circuit Configurations for SC Testing
    4. 7.4 Bench Measurement Results
    5. 7.5 Overall Summary of SiC vs IGBT Power Module SC Observation
  11. 8 Key Consideration in Designing SC Protection Circuit
  12. 9 Summary
  13. 10References

10 References

“Failure modes and mechanism analysis of SiC MOSFET under short-circuit conditions” by Xi Jiang, Jun Wang, Jiwu Lu, Jianjun Chen, Xin Yang, Zongjian Li, Chunming Tu, Z. John Shen

“IGBT Failure mechanism and boundary analysis under large current and high temperature turn-off” by Xiao Ma, Yongle Huang and Yifei Luo