In case of the IGBTs and SiC power
modules, the common failure reasons are:
- Dielectric break down
failure
- Both IGBTs and SiC have
voltage limits at the Gate pin and the Drain/Collector pin with respect
to the Source/Emitter, respectively. If the applied voltage to the power
module exceeds the max supported voltage, it causes the power module to
fail. So, the applied voltage and also system noise have to be
controlled so that the voltage does not exceed the maximum supported
Gate, Drain/Collector voltage of the power module.
- Thermal runaway failure
- Another common failure
reason for the power module is thermal runaway. During high current
operations, due to the internal resistance of the power module, the
power module temperature increases. If the power module is placed in an
extreme temperature environment or exceeds its maximum current limit
continuously, thermal runaway failure may occur. So, the power module
temperature needs to be controlled with an effective cooling mechanism
and the operating current needs to be controlled to not exceed its rated
operating current.
- Over-current /short-circuit failure (SC)
- Over-current and
short-circuit failures are the common reasons for power module failure.
In a multiphase system, there can be different types of Short-circuit
failures and it can happen due to the reasons provided in Table 3-1.
Table 3-1 OC/SC Failure Conditions and
the Failure Reasons
Failure
Condition |
Reason for
the Failure |
Shoot-through on a
phase |
Controller malfunction
/noise interference |
Phase to phase short
circuit |
Insulation breakdown
between the phases |
Phase to earth short
circuit |
Insulation breakdown
between phase to casing |
For the scope of the gate driver
protection approach, focus on the following power module failure possibilities and
how the gate driver can protect the power modules effectively.
- Short-circuit/Over-current
failure: due to noise/controller malfunction
- Di-electric Over-voltage failure:
during switching at high di/dt condition (mostly post SC Event)