TMCS1133

ACTIVO

Sensor de corriente de efecto Hall con aislamiento reforzado de ±1300 V, 80 ARMS y 1 MHz, con regist

Detalles del producto

Continuous current (max) (A) 80 Working isolation voltage (VIOWM) (Vrms) 600 Sensitivity (typ) (mV/mT) 25, 33, 50, 66, 75, 100, 150 Input offset current (±) (max) (mA) 30, 33, 40, 45, 130, 150, 160, 180, 200 Input offset current drift (±) (typ) (µA/°C) 200, 400, 670, 757.6, 1000, 1150, 1300, 1400, 1800, 2000 Features Alert Function, Digital output alerts MCU when current limit is reached, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Iq (max) (mA) 14 Small-signal bandwidth (kHz) 1000 Sensitivity error (%) 0.4 Sensitivity error drift (±) (max) (ppm/°C) 50 Rating Catalog Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
Continuous current (max) (A) 80 Working isolation voltage (VIOWM) (Vrms) 600 Sensitivity (typ) (mV/mT) 25, 33, 50, 66, 75, 100, 150 Input offset current (±) (max) (mA) 30, 33, 40, 45, 130, 150, 160, 180, 200 Input offset current drift (±) (typ) (µA/°C) 200, 400, 670, 757.6, 1000, 1150, 1300, 1400, 1800, 2000 Features Alert Function, Digital output alerts MCU when current limit is reached, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Iq (max) (mA) 14 Small-signal bandwidth (kHz) 1000 Sensitivity error (%) 0.4 Sensitivity error drift (±) (max) (ppm/°C) 50 Rating Catalog Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
SOIC (DVG) 10 106.09 mm² 10.3 x 10.3
  • High continuous current capability: 80ARMS
  • Robust reinforced isolation
  • High accuracy
    • Sensitivity error: ±0.1%
    • Sensitivity thermal drift: ±20ppm/°C
    • Sensitivity lifetime drift: ±0.2%
    • Offset error: ±0.2mV
    • Offset thermal drift: ±10µV/°C
    • Offset lifetime drift: ±0.2mV
    • Non-linearity: ±0.1%
  • High immunity to external magnetic fields
  • Fast Response
    • Signal bandwidth: 1MHz
    • Response time: 120ns
    • Propagation delay: 50ns
    • Overcurrent detection response: 100ns
  • Operating supply range: 3V to 5.5V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • Ranging from 20mV/A to 150mV/A
  • Safety related certifications (planned)
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1
  • High continuous current capability: 80ARMS
  • Robust reinforced isolation
  • High accuracy
    • Sensitivity error: ±0.1%
    • Sensitivity thermal drift: ±20ppm/°C
    • Sensitivity lifetime drift: ±0.2%
    • Offset error: ±0.2mV
    • Offset thermal drift: ±10µV/°C
    • Offset lifetime drift: ±0.2mV
    • Non-linearity: ±0.1%
  • High immunity to external magnetic fields
  • Fast Response
    • Signal bandwidth: 1MHz
    • Response time: 120ns
    • Propagation delay: 50ns
    • Overcurrent detection response: 100ns
  • Operating supply range: 3V to 5.5V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • Ranging from 20mV/A to 150mV/A
  • Safety related certifications (planned)
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1

The TMCS1133 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.4% maximum sensitivity error over temperature and lifetime with no system level calibration, or less than 0.9% maximum sensitivity error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated, on-chip, Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±96A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5kVRMS, coupled with a minimum of 8mm creepage and clearance, provides high levels of reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection.

The TMCS1133 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.4% maximum sensitivity error over temperature and lifetime with no system level calibration, or less than 0.9% maximum sensitivity error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated, on-chip, Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±96A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5kVRMS, coupled with a minimum of 8mm creepage and clearance, provides high levels of reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection.

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Documentación técnica

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Tipo Título Fecha
* Data sheet TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage , Overcurrent Detection and Ambient Field Rejection datasheet (Rev. B) PDF | HTML 09 ago 2024
Application brief Hall Effect Based Current Sensors in CLLLC Synchronous Rectification Control PDF | HTML 18 nov 2024
Certificate TMCS1133AEVM EU Declaration of Conformity (DoC) 21 ago 2023
Certificate TMCS1133BEVM EU Declaration of Conformity (DoC) 21 ago 2023
Certificate TMCS1133CEVM EU Declaration of Conformity (DoC) 21 ago 2023
Application brief Low-Drift, Precision, In-Line Isolated Magnetic Motor Current Measurements (Rev. A) 24 jul 2023

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

TMCS-A-ADAPTER-EVM — Tarjeta adaptadora de sensor de corriente de efecto Hall aislado TMCS para encapsulados DVG, DVF o D

El TMCS-A-ADAPTER-EVM es un módulo de evaluación (EVM) que facilita el uso rápido y cómodo de los monitores de detección de corriente de precisión de efecto Hall aislados TMCS que utilizan los encapsulados DVG, DVF o DZP. Este EVM permite que el usuario aumente la corriente de 90 A a través del (...)

Guía del usuario: PDF | HTML
Placa de evaluación

TMCS1133EVM — Módulo de evaluación TMCS1133

El módulo de evaluación (EVM) TMCS1133EVM es una herramienta destinada a facilitar el uso rápido y cómodo del TMCS1133, un monitor de detección de corriente de precisión de efecto Hall aislado que utiliza una referencia interna. Este EVM permite al usuario impulsar la máxima corriente de (...)

Guía del usuario: PDF | HTML
Diseños de referencia

PMP23338 — Diseño de referencia de PFC sin puente de tótem monofásico de 3.6 kW con función de medidor electrón

Este diseño de referencia es un convertidor de corrección de factor de potencia (PFC) sin puente, de tótem, con modo de conducción continua (CCM), monofásico y de 3.6 kW basado en nitruro de galio (GaN), destinado a la fuente de alimentación M-CRPS. Este diseño incluye la función de medidor (...)
Test report: PDF
Encapsulado Pines Símbolos CAD, huellas y modelos 3D
SOIC (DVG) 10 Ultra Librarian

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