LPC660

ACTIVE

Quad, 15-V, 350-kHz operational amplifier

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Data sheet

document-pdfAcrobat LPC660 Low Power CMOS Quad Operational Amplifier datasheet (Rev. D)

LPC660

ACTIVE

Data sheet

Order now

Product details

Number of channels

4

Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)

15

Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)

5

Rail-to-rail

In to V-, Out

GBW (typ) (MHz)

0.35

Slew rate (typ) (V/µs)

0.11

Vos (offset voltage at 25°C) (max) (mV)

3

Iq per channel (typ) (mA)

0.04

Vn at 1 kHz (typ) (nV√Hz)

42

Rating

Catalog

Operating temperature range (°C)

-40 to 85

Offset drift (typ) (µV/°C)

1.3

Input bias current (max) (pA)

4

CMRR (typ) (dB)

83

Iout (typ) (A)

0.021

Architecture

CMOS

Input common mode headroom (to negative supply) (typ) (V)

-0.4

Input common mode headroom (to positive supply) (typ) (V)

-1.9

Output swing headroom (to negative supply) (typ) (V)

0.004

Output swing headroom (to positive supply) (typ) (V)

-0.013

Number of channels

4

Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)

15

Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)

5

Rail-to-rail

In to V-, Out

GBW (typ) (MHz)

0.35

Slew rate (typ) (V/µs)

0.11

Vos (offset voltage at 25°C) (max) (mV)

3

Iq per channel (typ) (mA)

0.04

Vn at 1 kHz (typ) (nV√Hz)

42

Rating

Catalog

Operating temperature range (°C)

-40 to 85

Offset drift (typ) (µV/°C)

1.3

Input bias current (max) (pA)

4

CMRR (typ) (dB)

83

Iout (typ) (A)

0.021

Architecture

CMOS

Input common mode headroom (to negative supply) (typ) (V)

-0.4

Input common mode headroom (to positive supply) (typ) (V)

-1.9

Output swing headroom (to negative supply) (typ) (V)

0.004

Output swing headroom (to positive supply) (typ) (V)

-0.013

SOIC (D)

14

51.9 mm² 8.65 x 6

Rail-to-rail output swing
Micropower operation: (1 mW)
Specified for 100 kΩ and 5 kΩ loads
High voltage gain: 120 dB
Low input offset voltage: 3 mV
Low offset voltage drift: 1.3 μV/°C
Ultra low input bias current: 2 fA
Input common-mode includes V⁻
Operation range from +5V to +15V
Low distortion: 0.01% at 1 kHz
Slew rate: 0.11 V/μs
Full military temp. range available

All trademarks are the property of their respective owners.

Rail-to-rail output swing
Micropower operation: (1 mW)
Specified for 100 kΩ and 5 kΩ loads
High voltage gain: 120 dB
Low input offset voltage: 3 mV
Low offset voltage drift: 1.3 μV/°C
Ultra low input bias current: 2 fA
Input common-mode includes V⁻
Operation range from +5V to +15V
Low distortion: 0.01% at 1 kHz
Slew rate: 0.11 V/μs
Full military temp. range available

All trademarks are the property of their respective owners.

The LPC660 CMOS Quad operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltages from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input V_OS, drift, and broadband noise as well as voltage gain (into 100 kΩ and 5 kΩ) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 1 mW.

This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.

See the LPC662 datasheet for a Dual CMOS operational amplifier and LPC661 datasheet for a single CMOS operational amplifier with these same features.

The LPC660 CMOS Quad operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltages from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input V_OS, drift, and broadband noise as well as voltage gain (into 100 kΩ and 5 kΩ) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 1 mW.

This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.

See the LPC662 datasheet for a Dual CMOS operational amplifier and LPC661 datasheet for a single CMOS operational amplifier with these same features.

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