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TS5A3159A

ACTIVE

1-Ω, 5-V, 2:1 (SPDT), 1-channel general-purpose analog switch with powered-off protection

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Data sheet

TS5A3159A

ACTIVE
Data sheet Order now

Product details

Configuration 2:1 SPDT Number of channels 1 Power supply voltage - single (V) 1.8, 2.5, 3.3, 5 Protocols Analog Ron (typ) (Ω) 0.7 CON (typ) (pF) 84 ON-state leakage current (max) (µA) 0.1 Supply current (typ) (µA) 0.01 Bandwidth (MHz) 100 Operating temperature range (°C) -40 to 85 Features Break-before-make, Powered-off protection Input/output continuous current (max) (mA) 200 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
Configuration 2:1 SPDT Number of channels 1 Power supply voltage - single (V) 1.8, 2.5, 3.3, 5 Protocols Analog Ron (typ) (Ω) 0.7 CON (typ) (pF) 84 ON-state leakage current (max) (µA) 0.1 Supply current (typ) (µA) 0.01 Bandwidth (MHz) 100 Operating temperature range (°C) -40 to 85 Features Break-before-make, Powered-off protection Input/output continuous current (max) (mA) 200 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
DSBGA (YZP) 6 2.1875 mm² 1.75 x 1.25 SOT-23 (DBV) 6 8.12 mm² 2.9 x 2.8 SOT-SC70 (DCK) 6 4.2 mm² 2 x 2.1
  • Specified Break-Before-Make Switching
  • Isolation in Power-Down Mode, V+ = 0
  • Terminal Compatible With TS5A3159 Device
  • Low ON-State Resistance (1 Ω)
  • Control Inputs are 5.5-V Tolerant
  • Low Charge Injection
  • Excellent On-State Resistance Matching
  • Low Total Harmonic Distortion (THD)
  • 1.65-V to 5.5-V Single-Supply Operation
  • Latch-Up Performance Exceeds 100 mA
    Per JESD 78, Class II
  • ESD Performance Tested Per JESD
    • 2000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Specified Break-Before-Make Switching
  • Isolation in Power-Down Mode, V+ = 0
  • Terminal Compatible With TS5A3159 Device
  • Low ON-State Resistance (1 Ω)
  • Control Inputs are 5.5-V Tolerant
  • Low Charge Injection
  • Excellent On-State Resistance Matching
  • Low Total Harmonic Distortion (THD)
  • 1.65-V to 5.5-V Single-Supply Operation
  • Latch-Up Performance Exceeds 100 mA
    Per JESD 78, Class II
  • ESD Performance Tested Per JESD
    • 2000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)

The TS5A3159A device is a single-pole double-throw (SPDT) analog switch that is designed to operate from 1.65 V to 5.5 V. The device offers low on-state resistance and excellent ON-state resistance matching with the break-before-make feature, to prevent signal distortion during the transferring of a signal from one channel to another. The device has an excellent total harmonic distortion (THD) performance and consumes very low power. These features make this device suitable for portable audio applications.

The TS5A3159A device is a single-pole double-throw (SPDT) analog switch that is designed to operate from 1.65 V to 5.5 V. The device offers low on-state resistance and excellent ON-state resistance matching with the break-before-make feature, to prevent signal distortion during the transferring of a signal from one channel to another. The device has an excellent total harmonic distortion (THD) performance and consumes very low power. These features make this device suitable for portable audio applications.
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Technical documentation

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* Data sheet TS5A3159A 1-Ω SPDT Analog Switch 5-V and 3.3-V Single-Channel 2:1 Multiplexer and Demultiplexer datasheet (Rev. F) PDF | HTML 29 Jan 2018
Application note High-Efficiency Charging for TWS Using a 2-Pin Interface Application Report (Rev. A) PDF | HTML 16 May 2023
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 02 Jun 2022
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 01 Dec 2021
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 06 Jan 2021
Application note Preventing Excess Power Consumption on Analog Switches 03 Jul 2008
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 Jul 2004

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