封裝資訊
| 封裝 | 針腳 VQFN (RGR) | 20 |
| 操作溫度範圍 (°C) -40 to 110 |
| 包裝數量 | 運送業者 3,000 | LARGE T&R |
BQ77307 的特色
- Primary or secondary voltage, current, and temperature protection for 2-series to 7-series cells with an autonomous recovery option
- Voltage protection:
- Cell overvoltage (COV): 0 V–5.5 V in 1-mV steps, ±4-mV accuracy
- Cell undervoltage (CUV): 0 V–5.5 V in 1-mV steps, ±4-mV accuracy
- Current protection:
- Short circuit in discharge (SCD): 10 mV–500 mV, varying steps
- Overcurrent in charge (OCC): 3 mV–123 mV, 2-mV steps
- Overcurrent in discharge 1 and 2 (OCD1 and OCD2): 4 mV–200 mV, 2-mV steps
- Temperature protection using external NTC thermistor:
- Overtemperature in charge and discharge (OTC and OTD)
- Undertemperature in charge and discharge (UTC and UTD)
- Internal die overtemperature
- Integrated low-side drivers for NFET protection with an optional autonomous recovery
- Low power operation:
- NORMAL mode, both FETs enabled: 8 µA
- NORMAL mode, FETs disabled: 5 µA
- SHUTDOWN Mode: < 1 µA
- High voltage tolerance of 45 V on cell connect and select additional pins
- Integrated one-time-programmable (OTP) memory for device settings, programmed by TI
- Programmable interrupt for host processor, status information available through I 2C
- 400-kHz I 2C serial communications with optional CRC support
- Programmable LDO for external system usage
- 20-pin QFN 3.5 mm × 3.5 mm × 0.9 mm (RGR) package