TPS7H1121-SP
- Total Ionizing Dose radiation characterized:
-
Radiation hardness assurance (RHA) availability of 100krad(Si) or 50krad(Si)
-
- Single-Event Effects (SEE) Characterized
- Single-event latch-up (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
- Single-event functional interrupt (SEFI) characterized to LET = 75MeV-cm2/mg
- Single-event transient (SET) characterized to LET = 75MeV-cm2/mg
- Wide VIN range: 2.25V to 14V
- 2A maximum output current
- ±1.5% accuracy VIN > 3V over load, and temperature
- ±1.8% accuracy VIN < 3V over load, and temperature
- Soft start (SS) control through an external capacitor
- Open-drain power good (PG) output for power sequencing
- Programmable current limit through an external resistor (CL)
- Optional external control loop compensation utilizing the STAB pin
- Excellent load and line transient response
- Plastic packages out gas tested per ASTM E595
- Military (–55°C to 125°C) temperature range
The TPS7H1121 is a radiation-hardened, low dropout linear regulator (LDO) which operates over a wide input voltage range and is optimized for powering devices in a space environment. It is capable of sourcing up to 2A over a 2.25V to 14V input.
The device offers excellent stability and features a programmable current limit with a wide adjustment range. To support the complex power requirements of FPGAs, DSPs, and microcontrollers, the TPS7H1121 provides enable on and off functionality, programmable soft start, and a power good open-drain output.
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開發板
TPS7H1121EVM-CVAL — TPS7H1121-SP 評估模組
TPS7H1121EVM-CVAL 展示單一 TPS7H1121-SP LDO 穩壓器的運作。電路板提供可裝入其他元件的元件封裝,以便進行自訂配置測試,並提供測試點和 SMA 連接器,以簡化性能驗證。
封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
CFP (HFT) | 22 | Ultra Librarian |
訂購與品質
內含資訊:
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
內含資訊:
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。