CSD19534Q5A

ACTIVE

100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm

Product details

VDS (V) 100 VGS (V) 20 Type N-channel Configuration Single Rds(on) at VGS=10 V (max) (mΩ) 15.1 VGSTH typ (typ) (V) 2.8 QG (typ) (nC) 17 QGD (typ) (nC) 3.2 QGS (typ) (nC) 5.1 ID - silicon limited at TC=25°C (A) 44 ID - package limited (A) 40 Logic level No Rating Catalog Operating temperature range (°C) -55 to 150
VDS (V) 100 VGS (V) 20 Type N-channel Configuration Single Rds(on) at VGS=10 V (max) (mΩ) 15.1 VGSTH typ (typ) (V) 2.8 QG (typ) (nC) 17 QGD (typ) (nC) 3.2 QGS (typ) (nC) 5.1 ID - silicon limited at TC=25°C (A) 44 ID - package limited (A) 40 Logic level No Rating Catalog Operating temperature range (°C) -55 to 150
VSONP (DQJ) 8 29.4 mm² 4.9 x 6
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package

This 100 V, 12.6 mΩ, SON 5 mm × 6mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

Top View For all available packages, see the orderable addendum at the end of the data sheet. Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-inch thick FR4 PCB. Max RθJC = 2.0°C/W, pulse duration ≤100 μs, duty cycle ≤1%

This 100 V, 12.6 mΩ, SON 5 mm × 6mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

Top View For all available packages, see the orderable addendum at the end of the data sheet. Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-inch thick FR4 PCB. Max RθJC = 2.0°C/W, pulse duration ≤100 μs, duty cycle ≤1%

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Technical documentation

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Type Title Date
* Data sheet CSD19534Q5A 100 V N-Channel NexFET Power MOSFETs datasheet PDF | HTML 09 May 2014
Application note MOSFET Support and Training Tools (Rev. F) PDF | HTML 14 Jun 2024
Application note Semiconductor and IC Package Thermal Metrics (Rev. D) PDF | HTML 25 Mar 2024
Application note Using MOSFET Transient Thermal Impedance Curves In Your Design PDF | HTML 18 Dec 2023
Application note QFN and SON PCB Attachment (Rev. C) PDF | HTML 06 Dec 2023
Application note Using MOSFET Safe Operating Area Curves in Your Design PDF | HTML 13 Mar 2023
Application brief Tips for Successfully Paralleling Power MOSFETs PDF | HTML 31 May 2022
White paper Power Electronics in Motor Drives: Where is it? (Rev. A) 01 Oct 2019
Application note Ringing Reduction Techniques for NexFET High Performance MOSFETs 16 Nov 2011

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