SNOAA68 June   2021 LMG3410R050 , LMG3410R070 , LMG3410R150 , LMG3411R050 , LMG3411R070 , LMG3411R150 , LMG3422R030 , LMG3422R050 , LMG3425R030 , LMG3425R050 , LMG3522R030-Q1 , LMG3526R030

 

  1.   Trademarks
  2. 1 Introduction
  3. 2 Background
  4. 3 Addressing GaN Failure Mechanisms
  5. 4 Achieving Lifetime Reliability
  6. 5 Achieving Lifetime Switching
  7. 6 Achieving Reliable Design
  8. 7 Achieving Surge Robustness
  9. 8 System-Level Reliability and Protection
  10. 9 Automotive
  11. 10Conclusion
  12. 11References

11 References

  1. M. Asif Khan et. al., Metal semiconductor field effect transistor based on single crystal GaN, Appl. Phys.Lett. 62, 1786 (1993);
  2. JEDEC Standard JESD47K, Stress-Test-Driven Qualification of Integrated Circuits, Sept 2017
  3. AEC-Q100,Rev. H, Failure Mechanism based Stress Test Qualification for Integrated Circuits, Sept. 2014
  4. S. R. Bahl A Comprehensive Methodology to Qualify the Reliablity of GaN Products
  5. S. R. Bahl, D. Ruiz and D. S. Lee, Product-level reliability of GaN devices, 2016 IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, 2016, pp. 4A-3-1-4A-3-6, doi: 10.1109/ IRPS.2016.7574528.
  6. JEDEC Standard JESD94B, Application Specific Qualification Using Knowledge Based Test Methodology, Oct.2015
  7. JEDEC Guideline JEP180, Guideline for Switching Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices, v 1.0, Feb. 2020
  8. JEDEC Guideline JEP182. Test Method for Continuous-Switching Evaluation of Gallium Nitride Power Conversion Devices, v 1.0, Jan. 2021
  9. JEDEC Guideline JEP173. Dynamic ON-Resistance Test Method Guidelines for GaN HEMT based Power Conversion Devices, v 1.0, Jan. 2019
  10. S. R. Bahl et. al. System-level Reliability Validation of GaN Devices for Power Management, Presented at 2017 Applied Power Electronics Conference (APEC)
  11. I. Rossetto et al., Evidence of hot-electron effects during hard switching of AlGaN/GaN HEMTs, IEEE Trans.Electron Devices, v. 64, n. 9, p. 3734, 2017.
  12. R. Li, X. Wu, S. Yang, K. Sheng, Dynamic ON-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses, v.34, n.2 p. 1044, 2019.
  13. J. W. McPherson, Brief History of JEDEC Qualification Standards for Silicon Technology and Their Applicability to WBG Semiconductors, International Reliability Physics Symposium (IRPS), 3B.1-1, 2018.
  14. JEDEC Standard JEP122H, Failure Mechanisms and Models for Semiconductor Devices, Sept 2016.
  15. A. Ikoshi et al., Lifetime Evaluation for Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under Practical Switching Operations, IEEE International Reliability Physics Symposium (IRPS), p. 4E-2.1, 2018.
  16. J. Bocker, C. Kuring, M. Tannhauser, S. Dickerhoff, Ron Increase in GaN HEMTs – Temperature or Trapping Effects, IEEE Energy Conversion Congress and Exposition (ECCE), p. 1975, 2017.
  17. K. Li, P. Evans, and M. Johnson, Characterization and Modeling of Gallium Nitride Power Semiconductor Devices Dynamic On-state Resistance, IEEE Trans. on Power Elec., v. 33, n. 6, p. 5262, 2018.
  18. D. Ji, B. Ercan et al., Robust avalanche in GaN leading to record performance in avalanche photodiode, IEEE International Reliability Physics Symposium (IRPS), 2020, pp. 1-4, doi: 10.1109/ IRPS45951.2020.9129299.
  19. S. R. Bahl, F. Baltazar and Y. Xie, A Generalized Approach to Determine the Switching Lifetime of a GaN FET, International Reliability Physics Symposium (IRPS), Apr. 2020, doi: 10.1109/ IRPS45951.2020.9129631.
  20. Texas Instruments, Understanding MOSFET data sheets: Safe Operating Area (SOA) training
  21. L. Cao et. al., Experimental Characterization of Impact Ionization Coefficients for Electrons and Holes in GaN Grown on bulk GaN Substrates, Appl. Phys. Lett. 112, 262103 (2018)
  22. W. Maes et. al., Impact Ionization in Silicon: A Review and Update” Solid State Electronics, v. 33, n. 6, p. 705, 1990.
  23. Texas Instruments, No Avalanche? No Problem! GaN FETs are surge robust , E2E Design Support
  24. S. R. Bahl and P. Brohlin, A New Approach to Validate GaN FET Reliability to Power-line Surges Under Use Conditions, 2019 IEEE International Reliability Physics Symposium (IRPS), 2019, pp. 1-4, doi: 10.1109/ IRPS.2019.8720479.
  25. IEC 61000-4-5 International Standard, Electromagnetic compatibility (EMC) - Part 4-5: Testing and measurement techniques – Surge immunity test, Edition 3.0, 2014.
  26. VDE 0884-11, Semiconductor devices – magnetic and capacitive coupler for basic and reinforced isolation, Ed. 1.0.
  27. Texas Instruments, Qualifications Summary FAQs