SBAA541 December   2022 AMC1202 , AMC1302 , AMC1306M05 , AMC22C11 , AMC22C12 , AMC23C10 , AMC23C11 , AMC23C12 , AMC23C14 , AMC23C15 , AMC3302 , AMC3306M05

 

  1.   Abstract
  2.   Trademarks
  3. 1Introduction
    1. 1.1 DC Charging Station for Electric Vehicles
    2. 1.2 Current-Sensing Technology Selection and Equivalent Model
      1. 1.2.1 Sensing of the Current With Shunt-Based Solution
      2. 1.2.2 Equivalent Model of the Sensing Technology
  4. 2Current Sensing in AC/DC Converters
    1. 2.1 Basic Hardware and Control Description of AC/DC
      1. 2.1.1 AC Current Control Loops
      2. 2.1.2 DC Voltage Control Loop
    2. 2.2 Point A and B – AC/DC AC Phase-Current Sensing
      1. 2.2.1 Impact of Bandwidth
        1. 2.2.1.1 Steady State Analysis: Fundamental and Zero Crossing Currents
        2. 2.2.1.2 Transient Analysis: Step Power and Voltage Sag Response
      2. 2.2.2 Impact of Latency
        1. 2.2.2.1 Fault Analysis: Grid Short-Circuit
      3. 2.2.3 Impact of Gain Error
        1. 2.2.3.1 Power Disturbance in AC/DC Caused by Gain Error
        2. 2.2.3.2 AC/DC Response to Power Disturbance Caused by Gain Error
      4. 2.2.4 Impact of Offset
    3. 2.3 Point C and D – AC/DC DC Link Current Sensing
      1. 2.3.1 Impact of Bandwidth on Feedforward Performance
      2. 2.3.2 Impact of Latency on Power Switch Protection
      3. 2.3.3 Impact of Gain Error on Power Measurement
        1. 2.3.3.1 Transient Analysis: Feedforward in Point D
      4. 2.3.4 Impact of Offset
    4. 2.4 Summary of Positives and Negatives at Point A, B, C1/2 and D1/2 and Product Suggestions
  5. 3Current Sensing in DC/DC Converters
    1. 3.1 Basic Operation Principle of Isolated DC/DC Converter With Phase-Shift Control
    2. 3.2 Point E, F - DC/DC Current Sensing
      1. 3.2.1 Impact of Bandwidth
      2. 3.2.2 Impact of Gain Error
      3. 3.2.3 Impact of Offset Error
    3. 3.3 Point G - DC/DC Tank Current Sensing
    4. 3.4 Summary of Sensing Points E, F, and G and Product Suggestions
  6. 4Conclusion
  7. 5References

2.3.2 Impact of Latency on Power Switch Protection

Maximum latency of the sensing stage needs to be evaluated only for point C, since point C is the closest one to the power devices. The position of this sensor allows detection of both overcurrent and short circuits but at the cost of increasing the parasitic inductances in the loop. Detection latency must be shorter than the short-circuit withstand time of the power switch and therefore depends on the switch technology. The following numbers are guidelines only. To make sure of the withstand time, refer to the device data sheets:

  • SiC MOSFET: maximum latency of 1–3μs
  • IGBT: maximum latency of 2–10μs
  • GaN FETs < 3μs

In addition to the latency of the overcurrent sensor, the delay of the input filter, the response time of the MCU, and the turn-off-delay of the gate driver needs to be considered. To achieve an effective turn-off delay < 1.5μs, the latency of the overcurrent sensor must be < 1μs. TI offers a line of isolated comparators with latencies < 300ns that are specifically designed for this application.