SLIS150M March   2014  – June 2024 DRV5013

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Magnetic Characteristics
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Field Direction Definition
      2. 6.3.2 Device Output
      3. 6.3.3 Power-On Time
      4. 6.3.4 Output Stage
      5. 6.3.5 Protection Circuits
        1. 6.3.5.1 Overcurrent Protection (OCP)
        2. 6.3.5.2 Load Dump Protection
        3. 6.3.5.3 Reverse Supply Protection
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Standard Circuit
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1 Configuration Example
        3. 7.2.1.3 Application Curves
      2. 7.2.2 Alternative Two-Wire Application
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Device Nomenclature
      2. 8.1.2 Device Markings
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

9 Revision History

Changes from Revision L (February 2023) to Revision M (June 2024)

  • Added ND device information to the data sheetGo
  • Changed the temperature condition statement in the Typical Characteristics section headerGo
  • Added graphs to the Typical Characteristics section to include the DRV5013ND and DRV5013FA device versionsGo
  • Added text to the Overview section to highlight the differences between the inverted and non-inverted output device versionsGo
  • Changed the Field Direction Definition section Go
  • Added text to the Device Output section to highlight the differences between the inverted and non-inverted output device versionsGo
  • Added text to the Power-On Time section to highlight the differences between the inverted and non-inverted output device versionsGo

Changes from Revision K (August 2019) to Revision L (February 2023)

  • Updated the numbering format for tables, figures, and cross-references throughout the documentGo
  • Changed table title from: Device Information to: Package InformationGo
  • Moved the Power Supply Recommendations and Layout sections to the Application and Implementation sectionGo

Changes from Revision J (June 2019) to Revision K (August 2019)

  • Changed TJ to show existing range is for Q version device in the Absolute Maximum Ratings tableGo
  • Added E version for TJ to the Absolute Maximum Ratings tableGo
  • Changed TA to show existing range is for Q version device in the Recommended Operating Conditions tableGo
  • Added E version for TA to the Recommended Operating Conditions tableGo
  • Changed ICC test condition for TA from 125 to TA,MAX to highlight the differences between the E and Q version devicesGo
  • Changed rDS(on) test condition for TA from 125 to TA,MAX to highlight the difference between the E and Q version devicesGo
  • Changed all test conditions for TA max from 125 to TA,MAX to highlight difference between the E and Q devicesGo
  • Added new condition statement to Typical Characteristics sectionGo
  • Added data up to 150°C to Figure 1, Figure 2, Figure 4, Figure 6, Figure 8, and Figure 10Go

Changes from Revision I (August 2018) to Revision J (June 2019)

  • Added TO-92 (LPE) package to data sheet Go

Changes from Revision H (September 2016) to Revision I (August 2018)

  • Changed Power Supply Recommendations section Go

Changes from Revision G (August 2016) to Revision H (September 2016)

  • Changed the power-on time for the FA version in the Electrical Characteristics tableGo

Changes from Revision F (May 2016) to Revision G (August 2016)

  • Changed the maximum BOP and the minimum BRP for the FA version in the Magnetic Characteristics tableGo
  • Added the Layout sectionGo

Changes from Revision E (February 2016) to Revision F (May 2016)

  • Revised preliminary limits for the FA versionGo

Changes from Revision D (December 2015) to Revision E (February 2016)

  • Added the FA device optionGo
  • Added the typical bandwidth value to Magnetic Characteristics tableGo

Changes from Revision C (September 2014) to Revision D (June 2015)

  • Corrected body size of SOT-23 package and SIP package name to TO-92 Go
  • Added BMAX to Absolute Maximum Ratings Go
  • Removed table note from junction temperatureGo
  • Added Community Resources Go
  • Updated package tape and reel options for M and blank Go

Changes from Revision B (July 2014) to Revision C (September 2014)

  • Updated high sensitivity options Go
  • Changed the max operating junction temperature to 150°CGo
  • Updated the output rise and fall time typical values and removed max values in Switching Characteristics Go
  • Updated the values in Magnetic Characteristics Go
  • Updated all Typical Characteristics graphs Go
  • Updated Equation 4 Go
  • Updated Device Nomenclature Go

Changes from Revision A (March 2014) to Revision B (June 2014)

  • Changed IOCP MIN and MAX values from 20 and 40 to 15 and 45, respectively, in the Electrical Characteristics Go
  • Changed the MIN value for the ±2.3 mT BRP parameter from –4 to –5 in the Magnetic Characteristics tableGo
  • Updated the hysteresis values for each device option in the Magnetic Characteristics tableGo

Changes from Revision * (March 2014) to Revision A (March 2014)

  • Changed all references to Hall IC to Hall Effect Sensor Go
  • Changed RPM Meter to Tachometers in the Applications list Go
  • Changed the power-on value from 50 to 35 µs in the Features list Go
  • Changed the type of the OUT terminal from OD to Output in the Pin Functions table Go
  • Deleted Output pin current and changed VCCmax to VCC after the voltage ramp rate for the supply voltageGo
  • Changed RO to R1 in the test conditions for tr and tf in the Switching Characteristics tableGo
  • Added the bandwidth parameter to Magnetic Characteristics tableGo
  • Changed the MIN value for the ±2.3 mt BRP parameter from +2.3 to –2.3 in the Magnetic Characteristics tableGo
  • Deleted condition statement from the Typical Characteristics and changed all TJ to TA in the graph conditions Go
  • Deleted Number from the Power-On Time case names; added conditions to captions of case timing diagrams Go
  • Added the R1 tradeoff and lower current text after the equation in the Output Stage section Go
  • Added the C2 not required for most applications text after the second equation in the Output Stage sectionGo
  • Changed IO to ISINK in condition statement of FET overload fault condition in Reverse Supply Protection sectionGo