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TMCS1123

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±1300V reinforced isolation, 80Arms 250kHz Hall-effect current sensor with AFR, reference and ALERT

Product details

Continuous current (max) (A) 80 Working isolation voltage (VIOWM) (Vrms) 600 Sensitivity (typ) (mV/mT) 25, 50, 75, 100, 150 Input offset current (±) (max) (mA) 40, 42, 45, 60 Input offset current drift (±) (typ) (µA/°C) 133, 150, 160, 200 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Iq (max) (mA) 14 Small-signal bandwidth (kHz) 250 Sensitivity error (%) 0.4 Sensitivity error drift (±) (max) (ppm/°C) 50 Propagation delay time (typ) (ns) 130 Rating Catalog Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
Continuous current (max) (A) 80 Working isolation voltage (VIOWM) (Vrms) 600 Sensitivity (typ) (mV/mT) 25, 50, 75, 100, 150 Input offset current (±) (max) (mA) 40, 42, 45, 60 Input offset current drift (±) (typ) (µA/°C) 133, 150, 160, 200 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Iq (max) (mA) 14 Small-signal bandwidth (kHz) 250 Sensitivity error (%) 0.4 Sensitivity error drift (±) (max) (ppm/°C) 50 Propagation delay time (typ) (ns) 130 Rating Catalog Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
SOIC (DVG) 10 106.09 mm² 10.3 x 10.3
  • High continuous current capability: 80ARMS
  • Robust reinforced isolation
  • High accuracy
    • Sensitivity error: ±0.1%
    • Sensitivity thermal drift: ±20ppm/°C
    • Sensitivity lifetime drift: ±0.2%
    • Offset error: ±0.2mV
    • Offset thermal drift: ±2µV/°C
    • Offset lifetime drift: ±0.2mV
    • Non-linearity: ±0.1%
  • High immunity to external magnetic fields
  • Precision zero-current reference output
  • Fast Response
    • Signal bandwidth: 250kHz
    • Response time: 1µs
    • Propagation delay: 110ns
    • Overcurrent detection response: 100ns
  • Overcurrent detection MASK (TMCS1123D71)
  • Operating supply range: 3V to 5.5V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • Ranging from 25mV/A to 150mV/A
  • Safety related certifications (planned)
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1
  • High continuous current capability: 80ARMS
  • Robust reinforced isolation
  • High accuracy
    • Sensitivity error: ±0.1%
    • Sensitivity thermal drift: ±20ppm/°C
    • Sensitivity lifetime drift: ±0.2%
    • Offset error: ±0.2mV
    • Offset thermal drift: ±2µV/°C
    • Offset lifetime drift: ±0.2mV
    • Non-linearity: ±0.1%
  • High immunity to external magnetic fields
  • Precision zero-current reference output
  • Fast Response
    • Signal bandwidth: 250kHz
    • Response time: 1µs
    • Propagation delay: 110ns
    • Overcurrent detection response: 100ns
  • Overcurrent detection MASK (TMCS1123D71)
  • Operating supply range: 3V to 5.5V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • Ranging from 25mV/A to 150mV/A
  • Safety related certifications (planned)
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1

The TMCS1123 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.4% maximum sensitivity error over temperature and lifetime with no system level calibration, or less than 0.9% maximum sensitivity error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated, on-chip, Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±96A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5kVRMS, coupled with a minimum of 8mm creepage and clearance, provides high levels of reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection.

The TMCS1123 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.4% maximum sensitivity error over temperature and lifetime with no system level calibration, or less than 0.9% maximum sensitivity error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated, on-chip, Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±96A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5kVRMS, coupled with a minimum of 8mm creepage and clearance, provides high levels of reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection.

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Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

TMCS-A-ADAPTER-EVM — TMCS isolated Hall-effect current sensor adapter card for DVG, DVF or DZP packages (IC not included)

The TMCS-A-ADAPTER-EVM is an evaluation module (EVM) intended to facilitate rapid, convenient use of TMCS isolated Hall-effect precision current sense monitors that use the DVG, DVF, or DZP packages. This EVM allows the user push up to 90A current through the Hall-input side while measuring the (...)

User guide: PDF | HTML
Not available on TI.com
Evaluation board

TMCS1123EVM — TMCS1123 evaluation module for isolated Hall-effect current sensing

The TMCS1123EVM evaluation module (EVM) is intended to facilitate rapid, convenient use of the TMCS1123, an isolated Hall-effect precision current sense monitor using an internal ratiometric reference. This EVM allows the user to push the maximum operating current through the Hall-input side while (...)
User guide: PDF | HTML
Reference designs

TIDA-010257 — 10kW Vienna rectifier-based, three-phase power factor correction reference design

The Vienna rectifier power topology is used in high-power, three-phase power factor correction applications such as appliances, electric vehicle (EV) chargers, and telecom rectifiers. Control design of the rectifier can be complex. This reference design illustrates a method to control the power (...)
Design guide: PDF
Reference designs

TIDA-010933 — 1.6kW, bidirectional micro inverter based on GaN reference design

This reference design shows a four-input bidirectional 1.6kW GaN-based microinverter with energy storage capability.
Design guide: PDF
Reference designs

TIDA-010938 — 10kW, GaN-based single-phase string inverter with battery energy storage system reference design

This reference design provides an overview into the implementation of a GaN-based single-phase string inverter with bidirectional power conversion system for battery energy storage systems (BESS). The design consists of two string inputs, each able to handle up to 10 photovoltaic (PV) panels in (...)
Design guide: PDF
Reference designs

TIDA-010937 — Isolated low delay high PWM rejection Hall current sense reference design with digital interface

This reference design demonstrates an accurate low latency reinforced isolated bidirectional current sense system using the TMCS1123 precision Hall-effect current sensor for reliable phase current and DC-link current sensing with three phase inverters up to ±62A and less than 100ns over-current (...)
Design guide: PDF
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SOIC (DVG) 10 Ultra Librarian

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