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Voltage translators & level shifters
Auto-direction voltage translators

TXS0104E

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Four-bit bidirectional voltage-level shifter for open-drain and push-pull applications

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Data sheet

TXS0104E

ACTIVE
Data sheet Order now

Product details

Technology family TXS Applications SPIO Bits (#) 4 Data rate (max) (Mbps) 24 High input voltage (min) (V) 1.45 High input voltage (max) (V) 5.5 Vout (min) (V) 1.65 Vout (max) (V) 5.5 IOH (max) (mA) 0 IOL (max) (mA) 0 Supply current (max) (µA) 10 Features Edge rate accelerator, Output enable, Vcc isolation Input type Transmission Gate Output type 3-State, Transmission Gate Rating Catalog Operating temperature range (°C) -40 to 125
Technology family TXS Applications SPIO Bits (#) 4 Data rate (max) (Mbps) 24 High input voltage (min) (V) 1.45 High input voltage (max) (V) 5.5 Vout (min) (V) 1.65 Vout (max) (V) 5.5 IOH (max) (mA) 0 IOL (max) (mA) 0 Supply current (max) (µA) 10 Features Edge rate accelerator, Output enable, Vcc isolation Input type Transmission Gate Output type 3-State, Transmission Gate Rating Catalog Operating temperature range (°C) -40 to 125
DSBGA (YZT) 12 3.9375 mm² 2.25 x 1.75 NFBGA (NMN) 12 5 mm² 2 x 2.5 SOIC (D) 14 51.9 mm² 8.65 x 6 TSSOP (PW) 14 32 mm² 5 x 6.4 UQFN (RUT) 12 3.4 mm² 2 x 1.7 VQFN (RGY) 14 12.25 mm² 3.5 x 3.5 WQFN (BQA) 14 7.5 mm² 3 x 2.5
  • No direction-control signal needed
  • Maximum data rates:
    • 24Mbps (push pull)
    • 2Mbps (open drain)
  • Available in the Texas Instruments NanoFree™ package
  • 1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on B port (V CCA ≤ V CCB)
  • No power-supply sequencing required – V CCA or V CCB can be ramped first
  • Latch-up performance exceeds 100 mA per JESD 78, class II
  • ESD protection exceeds JESD 22:
    • A port:
      • 2000-V Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1000-V Charged-Device Model (C101)
    • B port:
      • 15-kV Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1000-V Charged-Device Model (C101)
  • IEC 61000-4-2 ESD (B port):
    • ±8-kV contact discharge
    • ±10-kV air-gap discharge
  • No direction-control signal needed
  • Maximum data rates:
    • 24Mbps (push pull)
    • 2Mbps (open drain)
  • Available in the Texas Instruments NanoFree™ package
  • 1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on B port (V CCA ≤ V CCB)
  • No power-supply sequencing required – V CCA or V CCB can be ramped first
  • Latch-up performance exceeds 100 mA per JESD 78, class II
  • ESD protection exceeds JESD 22:
    • A port:
      • 2000-V Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1000-V Charged-Device Model (C101)
    • B port:
      • 15-kV Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1000-V Charged-Device Model (C101)
  • IEC 61000-4-2 ESD (B port):
    • ±8-kV contact discharge
    • ±10-kV air-gap discharge

This 4-bit non-inverting translator uses two separate configurable power-supply rails. The A port is designed to track V CCA. V CCA accepts any supply voltage from 1.65 V to 3.6 V. V CCA must be less than or equal to V CCB. The B port is designed to track V CCB. V CCB accepts any supply voltage from 2.3 V to 5.5 V. This allows for low-voltage bidirectional translation between any of the 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

The TXS0104E is designed so that the OE input circuit is supplied by V CCA.

For the high-impedance state during power up or power down, tie OE to GND through a pull-down resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

This 4-bit non-inverting translator uses two separate configurable power-supply rails. The A port is designed to track V CCA. V CCA accepts any supply voltage from 1.65 V to 3.6 V. V CCA must be less than or equal to V CCB. The B port is designed to track V CCB. V CCB accepts any supply voltage from 2.3 V to 5.5 V. This allows for low-voltage bidirectional translation between any of the 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

The TXS0104E is designed so that the OE input circuit is supplied by V CCA.

For the high-impedance state during power up or power down, tie OE to GND through a pull-down resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.
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Technical documentation

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Type Title Date
* Data sheet TXS0104E4-Bit Bidirectional Voltage-Level Translator forOpen-Drain and Push-Pull Applications datasheet (Rev. K) PDF | HTML 03 Oct 2023
Application note Understanding Transient Drive Strength vs. DC Drive Strength in CMOS Output Buffers PDF | HTML 14 May 2024
White paper Understanding Functional Safety FIT Base Failure Rate Estimates per IEC 62380 and SN 29500 (Rev. A) PDF | HTML 30 Apr 2024
Application brief Integrated vs. Discrete Open Drain Level Translation PDF | HTML 09 Jan 2024
Application note Leveraging Edge Rate Accelerators with Auto-Sensing Level Shifters PDF | HTML 29 Sep 2023
Application brief Future-Proofing Your Level Shifter Design with TI's Dual Footprint Packages PDF | HTML 05 Sep 2023
Application note Do’s and Don’ts for TXB and TXS Voltage Level-Shifters with Edge Rate Accelerato PDF | HTML 28 Jun 2023
Application brief Enabling Next Generation Processors, FPGA, and ASSP with Voltage Level Translat PDF | HTML 17 Jan 2023
Application brief Enabling Smart Solar Inverter Designs with Level Translation PDF | HTML 31 Oct 2022
EVM User's guide TXS-EVM User's Guide (Rev. B) PDF | HTML 08 Jun 2021
Selection guide Voltage Translation Buying Guide (Rev. A) 15 Apr 2021
Application note Effects of pullup and pulldown resistors on TXS and TXB devices (Rev. A) 28 Mar 2018
Application note A Guide to Voltage Translation With TXS-Type Translators 29 Jun 2010

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