Detalles del producto

Configuration 2:1 SPDT Number of channels 4 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog, I2C, I2S, JTAG, RGMII, SPI, TDM, UART Ron (typ) (Ω) 5 CON (typ) (pF) 4 ON-state leakage current (max) (µA) 20 Bandwidth (MHz) 100 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Signal path translation Input/output continuous current (max) (mA) 128 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
Configuration 2:1 SPDT Number of channels 4 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog, I2C, I2S, JTAG, RGMII, SPI, TDM, UART Ron (typ) (Ω) 5 CON (typ) (pF) 4 ON-state leakage current (max) (µA) 20 Bandwidth (MHz) 100 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Signal path translation Input/output continuous current (max) (mA) 128 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
TSSOP (PW) 16 32 mm² 5 x 6.4 TVSOP (DGV) 16 23.04 mm² 3.6 x 6.4
  • Output Voltage Translation Tracks VCC
  • Supports Mixed-Mode Signal Operation On All Data I/O Ports
    • 5-V Input Down To 3.3-V Output Level Shift With 3.3-V VCC
    • 5-V/3.3-V Input Down To 2.5-V Output Level Shift With 2.5-V VCC
  • 5-V Tolerant I/Os With Device Powered-Up or Powered-Down
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 5 Typical)
  • Low Input/Output Capacitance Minimizes Loading (Cio(OFF) = 5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 20 µA Max)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 250 mA Per JESD 17
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Digital Applications: Level Translation, USB Interface, Memory Interleaving, Bus Isolation
  • Ideal for Low-Power Portable Equipment

  • Output Voltage Translation Tracks VCC
  • Supports Mixed-Mode Signal Operation On All Data I/O Ports
    • 5-V Input Down To 3.3-V Output Level Shift With 3.3-V VCC
    • 5-V/3.3-V Input Down To 2.5-V Output Level Shift With 2.5-V VCC
  • 5-V Tolerant I/Os With Device Powered-Up or Powered-Down
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 5 Typical)
  • Low Input/Output Capacitance Minimizes Loading (Cio(OFF) = 5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 20 µA Max)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 250 mA Per JESD 17
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Digital Applications: Level Translation, USB Interface, Memory Interleaving, Bus Isolation
  • Ideal for Low-Power Portable Equipment

The SN74CB3T3257 is a high-speed TTL-compatible FET multiplexer/demultiplexer with low ON-state resistance (ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. The SN74CB3T3257 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels (see Figure 1).

The SN74CB3T3257 is a 4-bit 1-of-2 multiplexer/demultiplexer with a single output-enable (OE)\ input. The select (S) input controls the data path of the multiplexer/demultiplexer. When OE\ is low, the multiplexer/demultiplexer is enabled, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the multiplexer/demultiplexer is disabled, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3T3257 is a high-speed TTL-compatible FET multiplexer/demultiplexer with low ON-state resistance (ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. The SN74CB3T3257 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels (see Figure 1).

The SN74CB3T3257 is a 4-bit 1-of-2 multiplexer/demultiplexer with a single output-enable (OE)\ input. The select (S) input controls the data path of the multiplexer/demultiplexer. When OE\ is low, the multiplexer/demultiplexer is enabled, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the multiplexer/demultiplexer is disabled, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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Documentación técnica

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Tipo Título Fecha
* Data sheet SN74CB3T3257 datasheet 15 oct 2003
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 02 jun 2022
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 01 dic 2021
Application note CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C) PDF | HTML 19 nov 2021
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 06 ene 2021
Selection guide Logic Guide (Rev. AB) 12 jun 2017
Application note How to Select Little Logic (Rev. A) 26 jul 2016
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 02 dic 2015
User guide LOGIC Pocket Data Book (Rev. B) 16 ene 2007
More literature Digital Bus Switch Selection Guide (Rev. A) 10 nov 2004
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 jul 2004
Application note Selecting the Right Level Translation Solution (Rev. A) 22 jun 2004
User guide Signal Switch Data Book (Rev. A) 14 nov 2003
Application note Bus FET Switch Solutions for Live Insertion Applications 07 feb 2003

Diseño y desarrollo

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Adaptador de interfaz

LEADED-ADAPTER1 — Adaptador de montaje superficial a conector macho DIP para pruebas rápidas de encapsulados con plomo

The EVM-LEADED1 board allows for quick testing and bread boarding of TI's common leaded packages.  The board has footprints to convert TI's D, DBQ, DCT,DCU, DDF, DGS, DGV, and PW surface mount packages to 100mil DIP headers.     

Guía del usuario: PDF
Modelo de simulación

HSPICE Model for SN74CB3T3257

SCDM117.ZIP (102 KB) - HSpice Model
Modelo de simulación

SN74CB3T3257 IBIS Model

SCDM059.ZIP (25 KB) - IBIS Model
Encapsulado Pines Símbolos CAD, huellas y modelos 3D
TSSOP (PW) 16 Ultra Librarian
TVSOP (DGV) 16 Ultra Librarian

Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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