Detalles del producto

Configuration Crosspoint/exchange Number of channels 10 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog Ron (typ) (Ω) 5 CON (typ) (pF) 7 ON-state leakage current (max) (µA) 20 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Signal path translation Input/output continuous current (max) (mA) 100 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
Configuration Crosspoint/exchange Number of channels 10 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog Ron (typ) (Ω) 5 CON (typ) (pF) 7 ON-state leakage current (max) (µA) 20 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Signal path translation Input/output continuous current (max) (mA) 100 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
SOIC (DW) 24 159.65 mm² 15.5 x 10.3 TSSOP (PW) 24 49.92 mm² 7.8 x 6.4 TVSOP (DGV) 24 32 mm² 5 x 6.4
  • Output Voltage Translation Tracks VCC
  • Supports Mixed-Mode Signal Operation On All Data I/O Ports
    • 5-V Input Down To 3.3-V Output Level Shift With 3.3-V VCC
    • 5-V/3.3-V Input Down To 2.5-V Output Level Shift With 2.5-V VCC
  • 5-V-Tolerant I/Os With Device Powered-Up or Powered-Down
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 5 Typical)
  • Low Input/Output Capacitance Minimizes Loading (Cio(OFF) = 8 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 20 µA Max)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 250 mA Per JESD 17
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Digital Applications: Level Translation, Memory Interleaving, Bus Isolation
  • Ideal for Low-Power Portable Equipment

  • Output Voltage Translation Tracks VCC
  • Supports Mixed-Mode Signal Operation On All Data I/O Ports
    • 5-V Input Down To 3.3-V Output Level Shift With 3.3-V VCC
    • 5-V/3.3-V Input Down To 2.5-V Output Level Shift With 2.5-V VCC
  • 5-V-Tolerant I/Os With Device Powered-Up or Powered-Down
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 5 Typical)
  • Low Input/Output Capacitance Minimizes Loading (Cio(OFF) = 8 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 20 µA Max)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 250 mA Per JESD 17
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Digital Applications: Level Translation, Memory Interleaving, Bus Isolation
  • Ideal for Low-Power Portable Equipment

The SN74CB3T3383 is a high-speed TTL-compatible FET bus-exchange switch with low ON-state resistance (ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. The SN74CB3T3383 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels (see Figure 1).

The SN74CB3T3383 is organized as a 10-bit bus switch or as a 5-bit bus-exchange with enable (BE)\ input. When used as a 5-bit bus-exchange, the device provides data exchanging between four signal ports. When BE\ is low, the bus-exchange switch is ON, and the select input (BX) controls the data path. When BE\ is high, the bus-exchange switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, BE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3T3383 is a high-speed TTL-compatible FET bus-exchange switch with low ON-state resistance (ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. The SN74CB3T3383 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels (see Figure 1).

The SN74CB3T3383 is organized as a 10-bit bus switch or as a 5-bit bus-exchange with enable (BE)\ input. When used as a 5-bit bus-exchange, the device provides data exchanging between four signal ports. When BE\ is low, the bus-exchange switch is ON, and the select input (BX) controls the data path. When BE\ is high, the bus-exchange switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, BE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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Documentación técnica

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Tipo Título Fecha
* Data sheet SN74CB3T3383 datasheet (Rev. A) 02 dic 2004
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 02 jun 2022
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 01 dic 2021
Application note CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C) PDF | HTML 19 nov 2021
Selection guide Logic Guide (Rev. AB) 12 jun 2017
Application note How to Select Little Logic (Rev. A) 26 jul 2016
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 02 dic 2015
User guide LOGIC Pocket Data Book (Rev. B) 16 ene 2007
More literature Digital Bus Switch Selection Guide (Rev. A) 10 nov 2004
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 jul 2004
Application note Selecting the Right Level Translation Solution (Rev. A) 22 jun 2004
User guide Signal Switch Data Book (Rev. A) 14 nov 2003
Application note Bus FET Switch Solutions for Live Insertion Applications 07 feb 2003

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Adaptador de interfaz

LEADED-ADAPTER1 — Adaptador de montaje superficial a conector macho DIP para pruebas rápidas de encapsulados con plomo

The EVM-LEADED1 board allows for quick testing and bread boarding of TI's common leaded packages.  The board has footprints to convert TI's D, DBQ, DCT,DCU, DDF, DGS, DGV, and PW surface mount packages to 100mil DIP headers.     

Guía del usuario: PDF
Modelo de simulación

HSPICE Model for SN74CB3T3383

SCDJ027.ZIP (101 KB) - HSpice Model
Encapsulado Pines Símbolos CAD, huellas y modelos 3D
SOIC (DW) 24 Ultra Librarian
TSSOP (PW) 24 Ultra Librarian
TVSOP (DGV) 24 Ultra Librarian

Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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