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Interruptores y multiplexores analógicos

SN74CBT3257C

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Interruptor de bus FET de 5 V, 2:1 (SPDT) y 4 canales con protección contra subdisparo de –2 V

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SN74CBT3257C

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Detalles del producto

Configuration 2:1 SPDT Number of channels 4 Power supply voltage - single (V) 5 Protocols Analog, I2C, I2S, JTAG, RGMII, SPI, TDM, UART Ron (typ) (Ω) 3 CON (typ) (pF) 16.5 Bandwidth (MHz) 200 Operating temperature range (°C) -40 to 85 Features Undershoot protection Input/output continuous current (max) (mA) 128 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
Configuration 2:1 SPDT Number of channels 4 Power supply voltage - single (V) 5 Protocols Analog, I2C, I2S, JTAG, RGMII, SPI, TDM, UART Ron (typ) (Ω) 3 CON (typ) (pF) 16.5 Bandwidth (MHz) 200 Operating temperature range (°C) -40 to 85 Features Undershoot protection Input/output continuous current (max) (mA) 128 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
SOIC (D) 16 59.4 mm² 9.9 x 6 SSOP (DB) 16 48.36 mm² 6.2 x 7.8 SSOP (DBQ) 16 29.4 mm² 4.9 x 6 TSSOP (PW) 16 32 mm² 5 x 6.4 VQFN (RGY) 16 14 mm² 4 x 3.5
  • Undershoot Protection for Off-Isolation on A and B Ports Up To .2 V
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5.5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 3 µA Max)
  • VCC Operating Range From 4 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports I2C Bus Expansion
  • Supports Both Digital and Analog Applications: USB Interface, Bus Isolation, Low-Distortion Signal Gating
  • Undershoot Protection for Off-Isolation on A and B Ports Up To .2 V
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5.5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 3 µA Max)
  • VCC Operating Range From 4 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports I2C Bus Expansion
  • Supports Both Digital and Analog Applications: USB Interface, Bus Isolation, Low-Distortion Signal Gating

The SN74CBT3257C is a high-speed TTL-compatible FET multiplexer/demultiplexer with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3257C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT3257C is a 4-bit 1-of-2 multiplexer/demultiplexer with a single output-enable (OE\) input. The select (S) input controls the data path of the multiplexer/demultiplexer. When OE\ is low, the multiplexer/demultiplexer is enabled and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the multiplexer/demultiplexer is disabled and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CBT3257C is a high-speed TTL-compatible FET multiplexer/demultiplexer with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3257C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT3257C is a 4-bit 1-of-2 multiplexer/demultiplexer with a single output-enable (OE\) input. The select (S) input controls the data path of the multiplexer/demultiplexer. When OE\ is low, the multiplexer/demultiplexer is enabled and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the multiplexer/demultiplexer is disabled and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
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Documentación técnica

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* Data sheet SN74CBT3257C datasheet 06 oct 2003
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 02 jun 2022
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 01 dic 2021
Application note CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C) PDF | HTML 19 nov 2021
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 06 ene 2021
Selection guide Little Logic Guide 2018 (Rev. G) 06 jul 2018
Selection guide Logic Guide (Rev. AB) 12 jun 2017
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 02 dic 2015
User guide LOGIC Pocket Data Book (Rev. B) 16 ene 2007
More literature Digital Bus Switch Selection Guide (Rev. A) 10 nov 2004
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 jul 2004
User guide Signal Switch Data Book (Rev. A) 14 nov 2003
Application note Bus FET Switch Solutions for Live Insertion Applications 07 feb 2003

Diseño y desarrollo

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LEADED-ADAPTER1 — Adaptador de montaje superficial a conector macho DIP para pruebas rápidas de encapsulados con plomo

The EVM-LEADED1 board allows for quick testing and bread boarding of TI's common leaded packages.  The board has footprints to convert TI's D, DBQ, DCT,DCU, DDF, DGS, DGV, and PW surface mount packages to 100mil DIP headers.     

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Adaptador de interfaz

LEADLESS-ADAPTER1 — Adaptador de montaje superficial a conector macho DIP para pruebas de encapsulados sin plomo de 6, 8

The EVM-LEADLESS1 board allows for quick testing and bread boarding of TI's common leadless packages.  The board has footprints to convert TI's DRC, DTP, DQE, RBW, RGY, RSE, RSV, RSW RTE, RTJ, RUK , RUC, RUG, RUM,RUT and YZP surface mount packages to 100mil DIP headers.
Guía del usuario: PDF
No disponible en TI.com
Modelo de simulación

SN74CBT3257C IBIS Model

SCDM035.ZIP (26 KB) - IBIS Model
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Encapsulado Pines Símbolos CAD, huellas y modelos 3D
SOIC (D) 16 Ultra Librarian
SSOP (DB) 16 Ultra Librarian
SSOP (DBQ) 16 Ultra Librarian
TSSOP (PW) 16 Ultra Librarian
VQFN (RGY) 16 Ultra Librarian
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Pedidos y calidad

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  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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