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TLC1079

ACTIVO

Amplificador operacional cuádruple de baja tensión de precisión de micropotencia

Detalles del producto

Number of channels 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 1.4 Vos (offset voltage at 25°C) (max) (mV) 0.85 Offset drift (typ) (µV/°C) 1.1 Input bias current (max) (pA) 60 GBW (typ) (MHz) 0.1 Slew rate (typ) (V/µs) 0.032 Rail-to-rail In to V- Iq per channel (typ) (mA) 0.01 Vn at 1 kHz (typ) (nV√Hz) 68 CMRR (typ) (dB) 95 Rating Catalog Operating temperature range (°C) 0 to 70 Iout (typ) (A) 0.01 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -0.8 Output swing headroom (to negative supply) (typ) (V) 0.025 Output swing headroom (to positive supply) (typ) (V) -0.8
Number of channels 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 1.4 Vos (offset voltage at 25°C) (max) (mV) 0.85 Offset drift (typ) (µV/°C) 1.1 Input bias current (max) (pA) 60 GBW (typ) (MHz) 0.1 Slew rate (typ) (V/µs) 0.032 Rail-to-rail In to V- Iq per channel (typ) (mA) 0.01 Vn at 1 kHz (typ) (nV√Hz) 68 CMRR (typ) (dB) 95 Rating Catalog Operating temperature range (°C) 0 to 70 Iout (typ) (A) 0.01 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -0.8 Output swing headroom (to negative supply) (typ) (V) 0.025 Output swing headroom (to positive supply) (typ) (V) -0.8
PDIP (N) 14 181.42 mm² 19.3 x 9.4 SOIC (D) 14 51.9 mm² 8.65 x 6
  • Power Dissipation as Low as 10 uW Typ Per Amplifier
  • Operates on a Single Silver-Oxide Watch Battery, VDD = 1.4 V Min
  • VIO...450 uV/850 uV Max in DIP and Small-Outline Package (TLC1078/79)
  • Input Offset Voltage Drift...0.1 uV/Month Typ, Including the First 30 Days
  • High-impedance LinCMOSTM Inputs
  • IIB = 0.6 pA Typ
  • High Open-Loop Gain...800000 Typ
  • Output Drive Capability > 20 mA
  • Slew Rate...47 V/ms Typ
  • Common-Mode Input Voltage Range Extends Below the Negative Rail
  • Output Voltage Range Includes Negative Rail
  • On-Chip ESD-Protection Circuitry
  • Small-Outline Package Option Also Available in Tape and Reel

LinCMOS is a trademark of Texas Instruments Incorporated.

  • Power Dissipation as Low as 10 uW Typ Per Amplifier
  • Operates on a Single Silver-Oxide Watch Battery, VDD = 1.4 V Min
  • VIO...450 uV/850 uV Max in DIP and Small-Outline Package (TLC1078/79)
  • Input Offset Voltage Drift...0.1 uV/Month Typ, Including the First 30 Days
  • High-impedance LinCMOSTM Inputs
  • IIB = 0.6 pA Typ
  • High Open-Loop Gain...800000 Typ
  • Output Drive Capability > 20 mA
  • Slew Rate...47 V/ms Typ
  • Common-Mode Input Voltage Range Extends Below the Negative Rail
  • Output Voltage Range Includes Negative Rail
  • On-Chip ESD-Protection Circuitry
  • Small-Outline Package Option Also Available in Tape and Reel

LinCMOS is a trademark of Texas Instruments Incorporated.

The TLC107x operational amplifiers offer ultra-low offset voltage, high gain, 110-kHz bandwidth, 47-V/ms slew rate, and just 150-uW power dissipation per amplifier.

With a supply voltage of 1.4 V, common-mode input to the negative rail, and output swing to the negative rail, the TLC107xC is an ideal solution for low-voltage battery-operated systems. The 20-mA output drive capability means that the TLC107x can easily drive small resistive and large capacitive loads when needed, while maintaining ultra-low standby power dissipation.

Since this device is functionally compatible as well as pin compatible with the TLC27L2/4 and TLC27L7/9, the TLC107x easily upgrades existing designs that can benefit from its improved performance.

The TLC107x incorporates internal ESD-protection circuits that will prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised when handling these devices as exposure to ESD may result in degradation of the device parametric performance. The TLC107x design also inhibits latch-up of the device inputs and outputs even with surge currents as large 100 mA.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C. The wide range of packaging options includes small-outline and chip-carrier versions for high-density system applications.

The TLC107x operational amplifiers offer ultra-low offset voltage, high gain, 110-kHz bandwidth, 47-V/ms slew rate, and just 150-uW power dissipation per amplifier.

With a supply voltage of 1.4 V, common-mode input to the negative rail, and output swing to the negative rail, the TLC107xC is an ideal solution for low-voltage battery-operated systems. The 20-mA output drive capability means that the TLC107x can easily drive small resistive and large capacitive loads when needed, while maintaining ultra-low standby power dissipation.

Since this device is functionally compatible as well as pin compatible with the TLC27L2/4 and TLC27L7/9, the TLC107x easily upgrades existing designs that can benefit from its improved performance.

The TLC107x incorporates internal ESD-protection circuits that will prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised when handling these devices as exposure to ESD may result in degradation of the device parametric performance. The TLC107x design also inhibits latch-up of the device inputs and outputs even with surge currents as large 100 mA.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C. The wide range of packaging options includes small-outline and chip-carrier versions for high-density system applications.

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Documentación técnica

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Tipo Título Fecha
* Data sheet LinCMOS uPower Precision Op Amps datasheet (Rev. A) 21 mar 2001

Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

Soporte y capacitación

Foros de TI E2E™ con asistencia técnica de los ingenieros de TI

El contenido lo proporcionan “tal como está” TI y los colaboradores de la comunidad y no constituye especificaciones de TI. Consulte los términos de uso.

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