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Amplificadores
Amplificadores operacionales (op amps)
Amplificadores operacionales de precisión (Vox < 1 mV)

TLC2202

ACTIVO

Amplificador operacional doble de precisión con bajo nivel de ruido de carril a carril

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OPA2205 ACTIVO Amplificador operacional bipolar dual de precisión, de carril a carril e-trim™ con baja corriente de Lower noise 7.2 (nV/√Hz) and lower power (0.22 mA). Upgraded AC and DC precision.
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OPA2196 ACTIVO Amplificador doble de 36 V, de baja potencia, para todo uso, con entrada compatible con mux. Enhanced precision and wider bandwidth at lower power

TLC2202

ACTIVO
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Detalles del producto

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.6 Vos (offset voltage at 25°C) (max) (mV) 0.5 Offset drift (typ) (µV/°C) 0.5 Input bias current (max) (pA) 60 GBW (typ) (MHz) 1.8 Slew rate (typ) (V/µs) 2.5 Rail-to-rail In to V-, Out Iq per channel (typ) (mA) 1 Vn at 1 kHz (typ) (nV√Hz) 8 CMRR (typ) (dB) 110 Rating Catalog Operating temperature range (°C) 0 to 70 Iout (typ) (A) 0.0045 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) -2.3 Output swing headroom (to negative supply) (typ) (V) 0.05 Output swing headroom (to positive supply) (typ) (V) -0.2
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.6 Vos (offset voltage at 25°C) (max) (mV) 0.5 Offset drift (typ) (µV/°C) 0.5 Input bias current (max) (pA) 60 GBW (typ) (MHz) 1.8 Slew rate (typ) (V/µs) 2.5 Rail-to-rail In to V-, Out Iq per channel (typ) (mA) 1 Vn at 1 kHz (typ) (nV√Hz) 8 CMRR (typ) (dB) 110 Rating Catalog Operating temperature range (°C) 0 to 70 Iout (typ) (A) 0.0045 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) -2.3 Output swing headroom (to negative supply) (typ) (V) 0.05 Output swing headroom (to positive supply) (typ) (V) -0.2
PDIP (P) 8 92.5083 mm² 9.81 x 9.43 SOIC (D) 14 51.9 mm² 8.65 x 6 SOP (PS) 8 48.36 mm² 6.2 x 7.8
  • B Grade Is 100% Tested for Noise
    • 30 nV/Hz Max at f = 10 Hz
    • 12 nV/Hz Max at f = 1 kHz
  • Low Input Offset Voltage . . . 500 µV Max
  • Excellent Offset Voltage Stability With Temperature . . . 0.5 µV/°C Typ
  • Rail-to-Rail Output Swing
  • Low Input Bias Current
    • 1 pA Typ at TA = 25°C
  • Common-Mode Input Voltage Range Includes the Negative Rail
  • Fully Specified For Both Single-Supply and Split-Supply Operation

Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
All other trademarks are the property of their respective owners.
  • B Grade Is 100% Tested for Noise
    • 30 nV/Hz Max at f = 10 Hz
    • 12 nV/Hz Max at f = 1 kHz
  • Low Input Offset Voltage . . . 500 µV Max
  • Excellent Offset Voltage Stability With Temperature . . . 0.5 µV/°C Typ
  • Rail-to-Rail Output Swing
  • Low Input Bias Current
    • 1 pA Typ at TA = 25°C
  • Common-Mode Input Voltage Range Includes the Negative Rail
  • Fully Specified For Both Single-Supply and Split-Supply Operation

Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
All other trademarks are the property of their respective owners.

The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOS™ process. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS™ process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.

The combination of excellent DC and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in degradation of the parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.

The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOS™ process. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS™ process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.

The combination of excellent DC and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in degradation of the parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.
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Documentación técnica

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* Data sheet Advanced LinCMOS (TM) Low-Noise Precision Operational Amplifiers datasheet (Rev. B) 11 ene 2008

Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

Soporte y capacitación

Foros de TI E2E™ con asistencia técnica de los ingenieros de TI

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